onsemi_MUN5336DW1T1G
original

onsemi
MUN5336DW1T1G

293-MUN5336DW1T1G
PDF Datasheet
Complementary NPN+PNP Bipolar Digital Transistor (BRT), 3000-REEL
9 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Max Operating Temperature
150
Number of Terminals
6
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
2
Eccn Code
EAR99
Lead Free
Yes
REACH
Compliant
Show More

MUN5336DW1T1G Description

MUN5336DW1T1G Description

The MUN5336DW1T1G from onsemi is a high-performance, pre-biased NPN/PNP bipolar junction transistor (BJT) array in a compact SC70-6 surface-mount package. Designed for efficiency and reliability, this device integrates 100kΩ base (R1) and emitter-base (R2) resistors, simplifying circuit design while reducing component count. With a collector-emitter breakdown voltage of 50V and a maximum collector current (Ic) of 100mA, it is well-suited for low-power switching and amplification applications. The transistor offers a low Vce saturation voltage of 250mV @ 300µA, 10mA, ensuring minimal power loss and improved efficiency. Its DC current gain (hFE) of 80 @ 5mA, 10V guarantees stable performance in signal processing circuits.

MUN5336DW1T1G Features

  • Pre-biased BJT array with integrated 100kΩ resistors, reducing external component requirements.
  • Low saturation voltage (250mV @ 10mA) for energy-efficient operation.
  • High voltage tolerance (50V Vce) and low leakage current (500nA max).
  • Compact SC70-6 package, ideal for space-constrained PCB designs.
  • RoHS3 compliant and REACH unaffected, meeting environmental regulations.
  • Moisture Sensitivity Level (MSL) 1, suitable for extended storage and handling.
  • Tape & Reel (TR) packaging for automated assembly processes.

MUN5336DW1T1G Applications

This transistor array excels in portable electronics, IoT devices, and low-power control systems where space and efficiency are critical. Key applications include:

  • Signal amplification in sensor interfaces and audio circuits.
  • Load switching for relays, LEDs, and small motors.
  • Digital logic level shifting in microcontroller-based designs.
  • Battery-powered devices due to its low power dissipation (250mW max).
  • Automotive and industrial control systems requiring robust performance.

Conclusion of MUN5336DW1T1G

The MUN5336DW1T1G stands out for its integrated biasing resistors, low saturation voltage, and compact form factor, making it a versatile solution for modern electronics. Its high reliability, compliance with environmental standards, and suitability for automated manufacturing ensure seamless integration into diverse applications. Engineers seeking a cost-effective, space-saving BJT array for low-power designs will find this device an optimal choice.

FAQ

What is MUN5336DW1T1G?
MUN5336DW1T1G is a Bipolar Transistor Arrays, Pre-Biased from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does MUN5336DW1T1G support?
Is MUN5336DW1T1G currently in stock?
What is the standard lead time for MUN5336DW1T1G?
Are there related or alternative parts for MUN5336DW1T1G?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ