


onsemi
MUN5336DW1T1G
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
MUN5336DW1T1G Description
MUN5336DW1T1G Description
The MUN5336DW1T1G from onsemi is a high-performance, pre-biased NPN/PNP bipolar junction transistor (BJT) array in a compact SC70-6 surface-mount package. Designed for efficiency and reliability, this device integrates 100kΩ base (R1) and emitter-base (R2) resistors, simplifying circuit design while reducing component count. With a collector-emitter breakdown voltage of 50V and a maximum collector current (Ic) of 100mA, it is well-suited for low-power switching and amplification applications. The transistor offers a low Vce saturation voltage of 250mV @ 300µA, 10mA, ensuring minimal power loss and improved efficiency. Its DC current gain (hFE) of 80 @ 5mA, 10V guarantees stable performance in signal processing circuits.
MUN5336DW1T1G Features
- Pre-biased BJT array with integrated 100kΩ resistors, reducing external component requirements.
- Low saturation voltage (250mV @ 10mA) for energy-efficient operation.
- High voltage tolerance (50V Vce) and low leakage current (500nA max).
- Compact SC70-6 package, ideal for space-constrained PCB designs.
- RoHS3 compliant and REACH unaffected, meeting environmental regulations.
- Moisture Sensitivity Level (MSL) 1, suitable for extended storage and handling.
- Tape & Reel (TR) packaging for automated assembly processes.
MUN5336DW1T1G Applications
This transistor array excels in portable electronics, IoT devices, and low-power control systems where space and efficiency are critical. Key applications include:
- Signal amplification in sensor interfaces and audio circuits.
- Load switching for relays, LEDs, and small motors.
- Digital logic level shifting in microcontroller-based designs.
- Battery-powered devices due to its low power dissipation (250mW max).
- Automotive and industrial control systems requiring robust performance.
Conclusion of MUN5336DW1T1G
The MUN5336DW1T1G stands out for its integrated biasing resistors, low saturation voltage, and compact form factor, making it a versatile solution for modern electronics. Its high reliability, compliance with environmental standards, and suitability for automated manufacturing ensure seamless integration into diverse applications. Engineers seeking a cost-effective, space-saving BJT array for low-power designs will find this device an optimal choice.



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










