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NSBA113EDXV6T1G
293-NSBA113EDXV6T1G
PDF Datasheet
50V Dual PNP Bipolar Digital Transistor, SOT-563, 6 LEAD, 4000-REEL
10 Weeks
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Tech Specifications
Package/Case
SOT-563-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-100mA
Height
0.55mm
hFE Min
3
Lead Free
Lead Free
Length
1.6mm
NSBA113EDXV6T1G Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
FAQ
What voltage specification is listed for NSBA113EDXV6T1G?
The listed voltage-related specification for NSBA113EDXV6T1G is 50V.
What package or case is NSBA113EDXV6T1G available in?
Is NSBA113EDXV6T1G currently in stock?
What operating temperature range does NSBA113EDXV6T1G support?
What is the standard lead time for NSBA113EDXV6T1G?
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