German
Japanese
Portuguese
Korea
Mexico
Dutch
onsemi
NSBA114EDP6T5G
293-NSBA114EDP6T5G
PDF Datasheet
Dual PNP Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
6 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
35
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
NSBA114EDP6T5G Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 338mW Surface Mount SOT-963
FAQ
What voltage specification is listed for NSBA114EDP6T5G?
The listed voltage-related specification for NSBA114EDP6T5G is 50V.
What is the standard lead time for NSBA114EDP6T5G?
What is NSBA114EDP6T5G?
Are there related or alternative parts for NSBA114EDP6T5G?
What package or case is NSBA114EDP6T5G available in?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
