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NSBA114EDXV6T1G
293-NSBA114EDXV6T1G
PDF Datasheet
Dual PNP Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
6 Weeks
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Tech Specifications
Package/Case
SOT-563-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Current Rating
-100mA
hFE Min
35
Lead Free
Lead Free
Max Breakdown Voltage
50V
NSBA114EDXV6T1G Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
FAQ
What voltage specification is listed for NSBA114EDXV6T1G?
The listed voltage-related specification for NSBA114EDXV6T1G is 50V.
What is the standard lead time for NSBA114EDXV6T1G?
What operating temperature range does NSBA114EDXV6T1G support?
Is NSBA114EDXV6T1G currently in stock?
Are there related or alternative parts for NSBA114EDXV6T1G?
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