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NSBA115TDP6T5G
293-NSBA115TDP6T5G
PDF Datasheet
Dual PNP Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
12 Weeks
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Tech Specifications
Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
hFE Min
160
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
NSBA115TDP6T5G Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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