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NSBC114EDP6T5G
293-NSBC114EDP6T5G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
12 Weeks
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Tech Specifications
Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
35
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
NSBC114EDP6T5G Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963
FAQ
What voltage specification is listed for NSBC114EDP6T5G?
The listed voltage-related specification for NSBC114EDP6T5G is 50V.
Are there related or alternative parts for NSBC114EDP6T5G?
What is the standard lead time for NSBC114EDP6T5G?
What package or case is NSBC114EDP6T5G available in?
What is NSBC114EDP6T5G?
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