onsemi_NSBC114EPDP6T5G
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onsemi
NSBC114EPDP6T5G

293-NSBC114EPDP6T5G
PDF Datasheet
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
12 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
hFE Min
35
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
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NSBC114EPDP6T5G Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963

FAQ

What voltage specification is listed for NSBC114EPDP6T5G?
The listed voltage-related specification for NSBC114EPDP6T5G is 50V.
Are there related or alternative parts for NSBC114EPDP6T5G?
What is the standard lead time for NSBC114EPDP6T5G?
What package or case is NSBC114EPDP6T5G available in?
Is NSBC114EPDP6T5G currently in stock?
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