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NSBC114EPDXV6T1G

The NSBC114EPDXV6T1G is a high-power, high-efficiency MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification in power electronic systems.

Description:

The NSBC114EPDXV6T1G is an N-channel MOSFET transistor with a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 42A, and a pulse drain current (Idm) of 200A. It has a gate-source voltage (Vgs) of ±20V and a threshold voltage (Vth) range of 2V to 4V. The device is available in a TO-220 package.

Features:

• High-power and high-efficiency MOSFET transistor
• Drain-source voltage (Vds) of 100V
• Continuous drain current (Id) of 42A
• Pulse drain current (Idm) of 200A
• Gate-source voltage (Vgs) of ±20V
• Threshold voltage (Vth) range of 2V to 4V
• Available in a TO-220 package

Applications:

The NSBC114EPDXV6T1G is suitable for use in a variety of power electronic systems, including:

• Power switching and amplification
• Motor control
• Power supply applications
• Inverters
• Battery management systems

Overall, the NSBC114EPDXV6T1G is a high-performance MOSFET transistor that offers high-power and high-efficiency in a compact package, making it ideal for use in a wide range of power electronic applications.