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NSBC114YDP6T5G
293-NSBC114YDP6T5G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
6 Weeks
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Responsible qualityTech Specifications
Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
NSBC114YDP6T5G Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
FAQ
What voltage specification is listed for NSBC114YDP6T5G?
The listed voltage-related specification for NSBC114YDP6T5G is 50V.
Are there related or alternative parts for NSBC114YDP6T5G?
What operating temperature range does NSBC114YDP6T5G support?
What is NSBC114YDP6T5G?
Is NSBC114YDP6T5G currently in stock?



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