


onsemi
NSBC123JPDP6T5G
293-NSBC123JPDP6T5G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
6 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
NSBC123JPDP6T5G Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
FAQ
What operating temperature range does NSBC123JPDP6T5G support?
NSBC123JPDP6T5G has an operating temperature range of 150°C.
What is the standard lead time for NSBC123JPDP6T5G?
What voltage specification is listed for NSBC123JPDP6T5G?
Are there related or alternative parts for NSBC123JPDP6T5G?
Is NSBC123JPDP6T5G currently in stock?



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










