onsemi_NSBC123JPDP6T5G
original

onsemi
NSBC123JPDP6T5G

293-NSBC123JPDP6T5G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
6 Weeks

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Tech Specifications

Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
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NSBC123JPDP6T5G Description

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963

FAQ

Are there related or alternative parts for NSBC123JPDP6T5G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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