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NSS40301MDR2G  

Bipolar Transistor Arrays

NSS40301MDR2G Description

The NSS40301MDR2G is a high-performance dual NPN bipolar transistor array from ON Semiconductor, designed for applications requiring high current and voltage handling capabilities. This device is offered in an 8-pin SOIC package, making it suitable for surface-mount applications in a wide range of electronic systems. With its robust specifications and performance benefits, the NSS40301MDR2G is an ideal choice for power amplification, switching, and other demanding applications.

NSS40301MDR2G Features

• High Current Handling: The NSS40301MDR2G can handle a maximum collector current (Ic) of 3A, making it suitable for high-power applications.
• Low Saturation Voltage: The device features a low Vce saturation voltage of 115mV at 200mA and 2A, ensuring efficient operation in low-voltage applications.
• High Voltage Breakdown: With a maximum collector-emitter breakdown voltage of 40V, the NSS40301MDR2G can handle high-voltage applications with ease.
• High DC Current Gain: The device offers a minimum DC current gain (hFE) of 180 at 1A and 2V, providing excellent amplification capabilities.
• Surface Mount Packaging: The 8-pin SOIC package allows for surface-mount applications, enabling compact and efficient PCB layouts.
• RoHS Compliance: The NSS40301MDR2G is compliant with RoHS3 regulations, making it suitable for environmentally conscious designs.

NSS40301MDR2G Applications

The NSS40301MDR2G is ideal for a variety of applications where high current and voltage handling are required. Some specific use cases include:

1. Power Amplifiers: The high current and voltage ratings make the NSS40301MDR2G suitable for use in power amplifiers, where high power output is needed.
2. Switching Applications: The low saturation voltage and high current handling capabilities make this device ideal for switching applications, such as motor control and power distribution.
3. Automotive Electronics: The NSS40301MDR2G can be used in automotive electronics, such as power windows, seat controls, and lighting systems, where high current and voltage ratings are essential.
4. Industrial Control Systems: The device's robust specifications make it suitable for use in industrial control systems, where reliability and performance are critical.

Conclusion of NSS40301MDR2G

The NSS40301MDR2G is a versatile and high-performance dual NPN bipolar transistor array from ON Semiconductor. Its combination of high current handling, low saturation voltage, and high voltage breakdown capabilities make it an ideal choice for a wide range of applications, including power amplification, switching, and automotive electronics. With its RoHS compliance and surface-mount packaging, the NSS40301MDR2G is a reliable and environmentally conscious solution for demanding electronic systems.

NSS40301MDR2G Documents

Download datasheets and manufacturer documentation for NSS40301MDR2G

PCN Assembly/Origin :

Assembly Change 06/Jan/2022      

Datasheets :

NSS40301MDR2G      

PCN Packaging :

Mult MSL1 Pkg Chg 20/Dec/2018      

HTML Datasheet :

NSS40301MDR2G      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration NSS40301MDR2G