onsemi_NSS60200LT1G

onsemi
NSS60200LT1G  
Single Bipolar Transistors

onsemi
NSS60200LT1G
276-NSS60200LT1G
Ersa
onsemi-NSS60200LT1G-datasheets-4716545.pdf
TRANS PNP 60V 2A SOT23-3
In Stock : 54539

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NSS60200LT1G Description

NSS60200LT1G Description

The NSS60200LT1G is a high-performance PNP single bipolar transistor from onsemi, designed for applications requiring high frequency and power handling capabilities. With a maximum collector-emitter breakdown voltage of 60V and a maximum collector current of 2A, this device is well-suited for a variety of demanding applications.

NSS60200LT1G Features

  • High Frequency Performance: The NSS60200LT1G boasts a transition frequency of 100MHz, making it ideal for high-speed switching applications.
  • Low Saturation Voltage: With a maximum Vce saturation of just 220mV at 200mA and 2A, this device offers excellent efficiency in low-voltage applications.
  • High Power Handling: Capable of handling up to 460mW of power, the NSS60200LT1G is well-suited for high-power applications.
  • Surface Mount Packaging: The device is available in a compact SOT23-3 surface mount package, making it easy to integrate into PCB designs.
  • RoHS Compliance: The NSS60200LT1G is compliant with RoHS3 standards, ensuring environmental responsibility in manufacturing processes.
  • REACH Unaffected: This device is not affected by the REACH regulation, ensuring uninterrupted supply and availability.

NSS60200LT1G Applications

The NSS60200LT1G is an excellent choice for a variety of applications, including:

  • Power Amplifiers: The high power handling and low saturation voltage make it ideal for use in power amplifiers.
  • Switching Regulators: The high transition frequency and low saturation voltage make it well-suited for use in switching regulators.
  • Motor Controls: The high current and voltage ratings make it suitable for use in motor control applications.
  • RF Amplifiers: The high transition frequency makes it an excellent choice for use in RF amplifiers.

Conclusion of NSS60200LT1G

In conclusion, the NSS60200LT1G is a high-performance PNP single bipolar transistor that offers excellent frequency and power handling capabilities in a compact surface mount package. Its unique combination of high transition frequency, low saturation voltage, and high power handling make it an ideal choice for a variety of demanding applications, including power amplifiers, switching regulators, motor controls, and RF amplifiers. With its RoHS compliance and REACH unaffected status, the NSS60200LT1G is a reliable and environmentally responsible choice for your next design.

Tech Specifications

Unit Weight
Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
f T Min (MHz)
Automotive
RoHS
Supplier Package
Transistor Type
Package / Case
Technology
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
Collector- Base Voltage VCBO
h FE Min
V EBO (V)
EU RoHS
MSL Temp (°C)
Moisture Sensitivity Level (MSL)
Status
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
I C Cont. (A)
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
MSL Type
Pin Count
Mounting
Lead Shape
Collector- Emitter Voltage VCEO Max
HTSUS
Package
V CEO Min (V)
USHTS
V CE(sat) Max (V)
Category
Case Outline
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
V BE(on) (V)
ECCN (US)
Maximum Power Dissipation (mW)
V BE(sat) (V)
V CBO (V)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Maximum DC Collector Current
Package Height
Collector-Emitter Saturation Voltage
Mfr
Polarity
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
RoHS Status
Mounting Style
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Transistor Polarity
Package Length
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Length
Gain Bandwidth Product fT
Power - Max
Part Status
P TM Max (W)
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
Pd - Power Dissipation
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number

NSS60200LT1G Documents

Download datasheets and manufacturer documentation for NSS60200LT1G

Ersa Mult Dev A/T Chg 21/Jun/2021      
Ersa NSS60200LT1G      
Ersa Transistor Technical Basics      
Ersa NSS60200LT1G      
Ersa SOT23 16/Sep/2016      
Ersa onsemi RoHS       Material Declaration NSS60200LT1G      

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