onsemi

NSS20101JT1G  

Single Bipolar Transistors

NSS20101JT1G Description

The NSS20101JT1G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is known for its exceptional technical specifications and performance benefits. With a frequency transition of 350MHz, it offers superior high-frequency performance, making it ideal for various applications that require fast switching and high-speed signal processing. The NSS20101JT1G is currently active and complies with the RoHS3 directive, ensuring environmental responsibility.

NSS20101JT1G Features

• High Frequency Performance: With a frequency transition of 350MHz, the NSS20101JT1G is designed for high-speed applications.
• Maximum Collector Current (Ic): Capable of handling up to 1A, this device is suitable for applications requiring high current.
• Low Vce Saturation: At 220mV @ 100mA, 1A, the NSS20101JT1G ensures efficient operation with minimal power loss.
• High Voltage Tolerance: The maximum collector-emitter breakdown voltage is 20V, making it suitable for high-voltage applications.
• Surface Mount Technology: The device is designed for surface mount, which allows for compact and efficient circuit board design.
• DC Current Gain (hFE): With a minimum gain of 200 @ 100mA, 2V, the NSS20101JT1G provides reliable amplification.
• Low Leakage Current: The maximum collector cutoff current is 100nA (ICBO), which is beneficial for power-sensitive applications.

NSS20101JT1G Applications

The NSS20101JT1G is ideal for a variety of applications due to its combination of high frequency, high current, and low power consumption. Some specific use cases include:

• High-Speed Digital Circuits: The high-frequency transition makes it suitable for digital circuits requiring fast switching.
• Power Amplifiers: The ability to handle 1A of current and 20V of voltage makes it a good choice for power amplifiers in audio and communication systems.
• Automotive Electronics: The device's robustness and high voltage tolerance make it suitable for automotive electronics, such as ignition systems and power control modules.

Conclusion of NSS20101JT1G

The NSS20101JT1G stands out among similar models with its high-frequency capabilities, high current handling, and low saturation voltage. Its surface mount design and RoHS compliance make it a versatile and environmentally friendly choice for a wide range of applications. Whether used in high-speed digital circuits, power amplifiers, or automotive electronics, the NSS20101JT1G delivers reliable performance and efficiency.

NSS20101JT1G Documents

Download datasheets and manufacturer documentation for NSS20101JT1G

Datasheets :

NSS20101J      

HTML Datasheet :

NSS20101J      

PCN Design/Specification :

Wire Bond 01/Dec/2010      

Environmental Information :

onsemi RoHS       Material Declaration NSS20101JT1G