onsemi_SS8550DTA
original

onsemi
SS8550DTA

276-SS8550DTA
PDF Datasheet
PNP BJT Transistor, 25V VCEO, 1.5A IC, 200MHz, TO-92
6 Weeks

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Tech Specifications

Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-280mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
500mV
Current Rating
-1.5A
Emitter Base Voltage (VEBO)
-6V
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SS8550DTA Description

SS8550DTA Description

The SS8550DTA is a high-performance PNP bipolar transistor offered by onsemi, designed to deliver exceptional performance in a variety of electronic applications. With a maximum collector-emitter breakdown voltage of 25V and a maximum collector current of 1.5A, this device is well-suited for power amplification and switching tasks. Its PNP configuration and through-hole mounting type make it a versatile choice for both new designs and upgrades to existing systems.

SS8550DTA Features

  • Technical Specifications: The SS8550DTA boasts a maximum operating temperature of 150°C (TJ), ensuring reliable performance in high-temperature environments. Its transition frequency of 200MHz makes it suitable for high-speed applications, while the maximum Vce saturation of 500mV @ 80mA, 800mA ensures efficient operation at low voltages.
  • Performance Benefits: This device offers a minimum DC current gain (hFE) of 160 @ 100mA, 1V, providing excellent current amplification capabilities. Its maximum power rating of 1W allows it to handle higher power loads, while the maximum collector cutoff current of 100nA ensures minimal leakage in off-state conditions.
  • Unique Advantages: The SS8550DTA's RoHS3 compliance and REACH unaffected status make it an environmentally friendly choice for electronic designs. Its EAR99 ECCN classification simplifies export compliance, while the not applicable moisture sensitivity level (MSL) indicates that this device is less susceptible to moisture-related damage.

SS8550DTA Applications

The SS8550DTA is ideal for a wide range of applications, including:

  • Power Amplification: Its high current and power ratings make it suitable for audio and radio frequency (RF) power amplification circuits.
  • Switching Applications: The device's low Vce saturation and high transition frequency make it well-suited for high-speed switching applications.
  • Automotive Electronics: The SS8550DTA's ability to operate at high temperatures and handle high currents make it an excellent choice for automotive electronics, such as ignition systems and power window controls.

Conclusion of SS8550DTA

The SS8550DTA is a versatile and high-performance PNP bipolar transistor that offers a range of technical specifications and performance benefits that make it suitable for a variety of applications. Its unique features, such as RoHS3 compliance and REACH unaffected status, further enhance its appeal for environmentally conscious designs. With its robust performance and wide range of applications, the SS8550DTA is an excellent choice for designers looking to incorporate a high-quality PNP transistor into their next project.

FAQ

What is the mounting type of SS8550DTA?
SS8550DTA uses a Through Hole mounting style based on the listed product specifications.
Is SS8550DTA currently in stock?
Does SS8550DTA have quantity-based pricing?
Are there related or alternative parts for SS8550DTA?
What package or case is SS8550DTA available in?
Availability (In Stock : 2447 )
Quantity Unit Price Ext. Price
5+ $0.16576 $0.83
50+ $0.13484 $6.74
150+ $0.11939 $17.91
500+ $0.10780 $53.90
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