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NSTB1002DXV5T1G
293-NSTB1002DXV5T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SOT-553, 5 LEAD, 4000-REEL
6 Weeks
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Tech Specifications
Package/Case
SOT-553-5
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-200mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Height
0.6mm
NSTB1002DXV5T1G Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 200mA 250MHz 500mW Surface Mount SOT-553
FAQ
What voltage specification is listed for NSTB1002DXV5T1G?
The listed voltage-related specification for NSTB1002DXV5T1G is 40V.
What is the standard lead time for NSTB1002DXV5T1G?
Is NSTB1002DXV5T1G currently in stock?
What is NSTB1002DXV5T1G?
What operating temperature range does NSTB1002DXV5T1G support?
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