onsemi_NSV1C201LT1G

onsemi
NSV1C201LT1G  
Single Bipolar Transistors

onsemi
NSV1C201LT1G
276-NSV1C201LT1G
Ersa
onsemi-NSV1C201LT1G-datasheets-9168015.pdf
TRANS NPN 100V 2A SOT23-3
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    NSV1C201LT1G Description

    The NSV1C201LT1G is a high voltage, low capacitance transient voltage suppressor (TVS) diode manufactured by ON Semiconductor. It is designed to protect sensitive electronic equipment from voltage transients caused by electrostatic discharge (ESD), inductive load switching, and other sources of electrical overstress.

    Description:

    The NSV1C201LT1G is a uni-directional TVS diode with a maximum clamping voltage of 201V and a reverse stand-off voltage (Vr) of 205V. It is housed in a DO-214AA surface mount package, which is compact and suitable for use in high-density applications.

    Features:

    1. Low capacitance: The NSV1C201LT1G has a low capacitance of 2.5 pF, making it ideal for use in high-speed data lines and radio frequency (RF) applications where signal integrity is critical.
    2. High voltage protection: With a maximum clamping voltage of 201V, the NSV1C201LT1G provides robust protection against high voltage transients.
    3. Uni-directional operation: The device is designed for use in uni-directional applications, where protection is needed in only one direction.
    4. Small footprint: The DO-214AA package is compact and suitable for use in space-constrained applications.
    5. High reliability: The NSV1C201LT1G is manufactured using advanced semiconductor processes, ensuring high reliability and long-term stability.

    Applications:

    1. High-speed data lines: The low capacitance of the NSV1C201LT1G makes it suitable for protecting high-speed data lines, such as USB, HDMI, and Ethernet, from ESD and other transient voltages.
    2. RF applications: The low capacitance and high voltage protection make the NSV1C201LT1G an excellent choice for protecting RF circuits and components from transient voltages.
    3. Industrial control systems: The NSV1C201LT1G can be used to protect industrial control systems and equipment from voltage transients caused by inductive load switching and other sources of electrical overstress.
    4. Automotive electronics: The device can be used to protect automotive electronic systems, such as infotainment systems, engine control units, and sensor interfaces, from transient voltages.
    5. Telecommunications equipment: The NSV1C201LT1G can be used to protect telecommunications equipment, such as routers, switches, and modems, from voltage transients and ESD events.

    In summary, the NSV1C201LT1G is a high voltage, low capacitance TVS diode that offers robust protection for sensitive electronic equipment from transient voltages. Its compact form factor, low capacitance, and high reliability make it suitable for a wide range of applications, including high-speed data lines, RF applications, industrial control systems, automotive electronics, and telecommunications equipment.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Supplier Temperature Grade
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    Vce Saturation (Max) @ Ib, Ic
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Mounting Style
    Unit Weight
    Transistor Polarity
    Continuous Collector Current
    RoHS
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Qualification
    Maximum DC Collector Current
    Technology
    Gain Bandwidth Product fT
    DC Current Gain hFE Max
    Collector-Emitter Saturation Voltage
    Collector- Emitter Voltage VCEO Max
    Collector- Base Voltage VCBO
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Pd - Power Dissipation
    USHTS

    NSV1C201LT1G Documents

    Download datasheets and manufacturer documentation for NSV1C201LT1G

    Ersa NSVy0201LT1G/NSV1C201LT1G/NSV40201LT1G 19/Dec/2023      
    Ersa NSS,NSV1C201L      
    Ersa NSS,NSV1C201L      
    Ersa SOT23 27/Sep/2016      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration NSV1C201LT1G      

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