onsemi_2SB1124T-TD-E

onsemi
2SB1124T-TD-E  
Single Bipolar Transistors

onsemi
2SB1124T-TD-E
276-2SB1124T-TD-E
Ersa
onsemi-2SB1124T-TD-E-datasheets-2133561.pdf
TRANS PNP 50V 3A PCP
In Stock : 679

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

2SB1124T-TD-E Description

2SB1124T-TD-E Description

The 2SB1124T-TD-E is a PNP single bipolar transistor offered by onsemi. It features a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 3A, and a maximum power dissipation of 500mW. The device operates within a junction temperature range of 150°C and offers a transition frequency of 150MHz. The 2SB1124T-TD-E is designed for surface mount applications and is packaged in a PCP package, making it suitable for high-density PCB layouts. It is compliant with the RoHS3 directive and is classified as EAR99 for export control purposes.

2SB1124T-TD-E Features

  • PNP transistor type for versatile circuit design
  • 50V maximum collector-emitter breakdown voltage for reliable operation in high-voltage applications
  • 3A maximum collector current for driving demanding loads
  • 150MHz transition frequency for high-speed switching applications
  • 500mW maximum power dissipation for efficient operation in power-sensitive designs
  • Surface mount packaging for high-density PCB layouts
  • RoHS3 compliance for environmentally friendly manufacturing
  • EAR99 classification for simplified export procedures

2SB1124T-TD-E Applications

The 2SB1124T-TD-E is ideal for a variety of applications that require high-voltage, high-current, and high-speed operation. Some specific use cases include:

  1. Power amplifiers and switches in consumer electronics, such as audio amplifiers and power supplies
  2. Motor control circuits in industrial automation systems, where high current and voltage ratings are essential
  3. High-speed digital circuits, such as data transmission and processing systems, benefiting from the device's 150MHz transition frequency
  4. RF and microwave circuits, where the PNP transistor type offers advantages in terms of noise performance and linearity

Conclusion of 2SB1124T-TD-E

The 2SB1124T-TD-E is a high-performance PNP single bipolar transistor that offers a unique combination of high voltage, current, and speed capabilities. Its surface mount packaging and RoHS3 compliance make it suitable for a wide range of applications in the consumer electronics, industrial automation, and high-speed digital circuits markets. While the device is now considered obsolete, it remains a valuable option for legacy designs and applications that require its specific performance characteristics.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
Continuous Collector Current
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Length
Technology
Gain Bandwidth Product fT
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Width

2SB1124T-TD-E Documents

Download datasheets and manufacturer documentation for 2SB1124T-TD-E

Ersa Product Discontinuance Notification (PDF)      
Ersa General Announcement - 2D Barcoding (PDF)       Announcement of a change in Design with color of 7 inch-reel (PDF)       Temporary Suspension of ISO 9001 Certification for Hitachi Chemical Co., Ltd.       Final PCN for wafer fab transfer from Gunma to Niigata in Japan (Group FC) (PDF)      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service