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NSVB123JPDXV6T1G
293-NSVB123JPDXV6T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
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Tech Specifications
Package/Case
SOT-563-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
NSVB123JPDXV6T1G Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
FAQ
What voltage specification is listed for NSVB123JPDXV6T1G?
The listed voltage-related specification for NSVB123JPDXV6T1G is 50V.
What operating temperature range does NSVB123JPDXV6T1G support?
Are there related or alternative parts for NSVB123JPDXV6T1G?
Is NSVB123JPDXV6T1G currently in stock?
What package or case is NSVB123JPDXV6T1G available in?
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