onsemi_NSVBA114EDXV6T1G

onsemi
NSVBA114EDXV6T1G  
Bipolar Transistor Arrays, Pre-Biased

onsemi
NSVBA114EDXV6T1G
293-NSVBA114EDXV6T1G
Ersa
onsemi-NSVBA114EDXV6T1G-datasheets-3296835.pdf
TRANS PREBIAS 2PNP 50V SOT563-6
In Stock : 3779

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ISO9001
Quality Policy
ISO45001
ISO14001

NSVBA114EDXV6T1G Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Bipolar Transistor Arrays, Pre-Biased that the NSVBA114EDXV6T1G belongs to can be classified under the Discrete Semiconductors. NSVBA114EDXV6T1G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. NSVBA114EDXV6T1G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Typical Resistor Ratio
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Frequency - Transition
Current - Collector (Ic) (Max)
Typical Input Resistor (kOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
Resistor - Base (R1)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Continuous DC Collector Current (mA)
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Power - Max
Resistor - Emitter Base (R2)
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Qualification
Transistor Polarity
USHTS
RoHS

NSVBA114EDXV6T1G Documents

Download datasheets and manufacturer documentation for NSVBA114EDXV6T1G

Ersa Mult Dev Assembly Chgs 3/Jul/2020      
Ersa MUN5111DW1, NSBA114EDxx      
Ersa Mult Devices 27/Oct/2017      
Ersa MUN5111DW1, NSBA114EDxx      
Ersa Carrier Tape 22/Aug/2017      
Ersa onsemi RoHS       Material Declaration NSVBA114EDXV6T1G      

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