onsemi_NSVBAS21TMR6T1G

onsemi
NSVBAS21TMR6T1G  
Diode Arrays

onsemi
NSVBAS21TMR6T1G
286-NSVBAS21TMR6T1G
Ersa
onsemi-NSVBAS21TMR6T1G-datasheets-3014749.pdf
DIODE ARRAY GP 250V 200MA SC74
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    NSVBAS21TMR6T1G Description

    The NSVBAS21TMR6T1G is a high-power transistor offered by ON Semiconductor. It is designed for use in high-power applications and offers several features that make it suitable for a range of applications.

    Description:

    The NSVBAS21TMR6T1G is a high-power transistor that is designed for use in high-power applications. It is a Darlington transistor, which means it combines two transistors in a single package to provide high current gain and high power output. The transistor is housed in a TO-220 package, which is a standard package for power transistors.

    Features:

    1. High Power Output: The NSVBAS21TMR6T1G is designed to handle high power levels, making it suitable for use in applications that require high power output.
    2. Darlington Configuration: The transistor is a Darlington transistor, which means it combines two transistors in a single package to provide high current gain and high power output.
    3. High Voltage Rating: The transistor has a high voltage rating, which allows it to operate in high voltage applications.
    4. Thermal Stability: The transistor is designed to operate over a wide temperature range, making it suitable for use in applications that require thermal stability.
    5. Low Distortion: The transistor is designed to provide low distortion, making it suitable for use in applications that require high fidelity sound.

    Applications:

    The NSVBAS21TMR6T1G is suitable for a range of high-power applications, including:

    1. Audio Amplifiers: The transistor's high power output and low distortion make it suitable for use in audio amplifiers.
    2. Power Supplies: The transistor's high voltage rating and thermal stability make it suitable for use in power supply applications.
    3. Motor Controls: The transistor's high current gain and high power output make it suitable for use in motor control applications.
    4. Switching Applications: The transistor's fast switching capabilities make it suitable for use in switching applications.
    5. Industrial Control: The transistor's high power output and thermal stability make it suitable for use in industrial control applications.

    Overall, the NSVBAS21TMR6T1G is a high-power transistor that offers several features that make it suitable for a range of high-power applications. Its Darlington configuration, high voltage rating, thermal stability, and low distortion make it a popular choice for audio amplifiers, power supplies, motor controls, switching applications, and industrial control applications.

    Tech Specifications

    Configuration
    PPAP
    Product Status
    Automotive
    Supplier Package
    Package / Case
    Peak Forward Voltage (V)
    Technology
    REACH Status
    Voltage - DC Reverse (Vr) (Max)
    Peak Non-Repetitive Surge Current (A)
    EU RoHS
    Maximum Continuous Forward Current (A)
    Operating Temperature - Junction
    Moisture Sensitivity Level (MSL)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Standard Package Name
    Current - Reverse Leakage @ Vr
    Pin Count
    Mounting
    Lead Shape
    Diode Configuration
    HTSUS
    Package
    Peak Reverse Recovery Time (ns)
    Reverse Recovery Time (trr)
    PCB changed
    HTS
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    Current - Average Rectified (Io) (per Diode)
    RoHS Status
    Maximum DC Reverse Voltage (V)
    Speed
    Peak Reverse Current (uA)
    Package Length
    Series
    Type
    Voltage - Forward (Vf) (Max) @ If
    Part Status
    Package Width
    Base Product Number
    Mounting Style
    Unit Weight
    Max Surge Current
    Product
    Peak Reverse Voltage
    Ir - Reverse Current
    RoHS
    Minimum Operating Temperature
    Qualification
    Vf - Forward Voltage
    Maximum Operating Temperature
    Recovery Time
    If - Forward Current
    USHTS

    NSVBAS21TMR6T1G Documents

    Download datasheets and manufacturer documentation for NSVBAS21TMR6T1G

    Ersa BAS21TMR6T1G      
    Ersa BAS21TMR6T1G      
    Ersa Green Compound Update 04/Mar/2015      
    Ersa onsemi RoHS       Material Declaration NSVBAS21TMR6T1G      

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