onsemi_NSVBC857CWT1G

onsemi
NSVBC857CWT1G  
Single Bipolar Transistors

onsemi
NSVBC857CWT1G
276-NSVBC857CWT1G
Ersa
onsemi-NSVBC857CWT1G-datasheets-9734124.pdf
TRANS PNP 45V 0.1A SC70-3
In Stock : 15011

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ISO9001
Quality Policy
ISO45001
ISO14001

NSVBC857CWT1G Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single Bipolar Transistors that the NSVBC857CWT1G belongs to can be classified under the Discrete Semiconductors. NSVBC857CWT1G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. NSVBC857CWT1G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
Continuous Collector Current
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Qualification
Maximum DC Collector Current
Technology
Gain Bandwidth Product fT
DC Current Gain hFE Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS

NSVBC857CWT1G Documents

Download datasheets and manufacturer documentation for NSVBC857CWT1G

Ersa Bond Wire 07/Mar/2020      
Ersa BC856B-58B      
Ersa BC856B-58B      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NSVBC857CWT1G      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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