onsemi

SZ1SMB5940BT3G

The SZ1SMB5940BT3G is a high voltage, high power MOSFET manufactured by ON Semiconductor. It is designed for use in a variety of applications that require high voltage and high power handling capabilities.

Description:

The SZ1SMB5940BT3G is an N-channel MOSFET with a breakdown voltage (V(BR)) of 600V. It has a continuous drain current (I(D)) of 9.4A and a pulsed drain current (I(D)) of 28A. The device has a low on-state resistance (R(DS(ON))) of 5.3 mOhm max, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage and high power handling capabilities
• Low on-state resistance for improved efficiency
• N-channel MOSFET design
• Suitable for use in a variety of applications

Applications:

The SZ1SMB5940BT3G is suitable for use in a wide range of applications that require high voltage and high power handling capabilities. Some potential applications include:

• Power supplies
• Motor control
• Inverters
• Battery protection circuits
• Industrial controls
• Automotive electronics

Overall, the SZ1SMB5940BT3G is a high performance MOSFET that offers excellent voltage and current handling capabilities, making it a good choice for a variety of high power applications.