onsemi

NSVBCP69T1G  

Single Bipolar Transistors

NSVBCP69T1G Description

The NSVBCP69T1G is a high-performance PNP bipolar transistor designed for applications requiring high power and high frequency. Manufactured by onsemi, this device is part of the Single Bipolar Transistors category and is currently active in the market. With a maximum power rating of 1.5W and a collector-emitter breakdown voltage of 20V, the NSVBCP69T1G is suitable for various high-power and high-frequency applications.

NSVBCP69T1G Features

• Technical Specifications:

  • Frequency - Transition: 60MHz
  • Current - Collector (Ic) (Max): 1 A
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Power - Max: 1.5 W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

• Performance Benefits:

  • High power handling capability (1.5W max power)
  • High collector-emitter breakdown voltage (20V)
  • Low saturation voltage (500mV @ 100mA, 1A)
  • High current gain (min. 85 @ 500mA, 1V)

• Unique Advantages:

  • Surface mount packaging for easy integration into PCB designs
  • RoHS3 compliant, making it suitable for environmentally friendly applications
  • REACH unaffected, ensuring compliance with European chemical regulations

NSVBCP69T1G Applications

The NSVBCP69T1G is ideal for various applications where high power and high frequency are required. Some specific use cases include:

1. Power Amplifiers: Due to its high power handling capability and low saturation voltage, the NSVBCP69T1G is suitable for use in power amplifiers, particularly in audio and radio frequency applications.

2. Switching Regulators: The high collector-emitter breakdown voltage and low saturation voltage make it an excellent choice for switching regulators in power management systems.

3. RF Applications: The 60MHz transition frequency and high current gain make the NSVBCP69T1G suitable for use in radio frequency applications, such as transmitters and receivers.

Conclusion of NSVBCP69T1G

The NSVBCP69T1G is a versatile and high-performance PNP bipolar transistor from onsemi, offering a combination of high power handling, high frequency, and low saturation voltage. Its unique features, such as surface mount packaging, RoHS3 compliance, and REACH unaffected status, make it an ideal choice for a wide range of applications, including power amplifiers, switching regulators, and RF applications. With its impressive technical specifications and performance benefits, the NSVBCP69T1G stands out as a reliable and efficient solution for high-power and high-frequency electronic designs.

NSVBCP69T1G Documents

Download datasheets and manufacturer documentation for NSVBCP69T1G

Datasheets :

BCP69T1G, NSVBCP69T1G      

HTML Datasheet :

BCP69T1G, NSVBCP69T1G      

Environmental Information :

onsemi RoHS       Material Declaration NSVBCP69T1G       onsemi REACH