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NSVMUN5212DW1T1G
293-NSVMUN5212DW1T1G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
9 Weeks
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Tech Specifications
Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
hFE Min
60
Lead Free
Lead Free
Max Breakdown Voltage
50V
NSVMUN5212DW1T1G Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
FAQ
What package or case is NSVMUN5212DW1T1G available in?
NSVMUN5212DW1T1G is available in the SOT-363-6 package / case.
What is the standard lead time for NSVMUN5212DW1T1G?
What operating temperature range does NSVMUN5212DW1T1G support?
What is NSVMUN5212DW1T1G?
Are there related or alternative parts for NSVMUN5212DW1T1G?
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