onsemi_NTB125N02RT4G
original

onsemi
NTB125N02RT4G

278-NTB125N02RT4G
PDF Datasheet
Power MOSFET 125 Amps, 24 Volts, N-channel D2PAK and TO-220, D2PAK 2 LEAD, 800-REEL

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
120.5A
Current Rating
125A
Drain to Source Breakdown Voltage
24V
Drain to Source Voltage (Vdss)
24V
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.44nF
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NTB125N02RT4G Description

NTB125N02RT4G Description

The NTB125N02RT4G from onsemi is an N-channel power MOSFET designed for high-efficiency switching applications. With a 24V drain-to-source voltage (Vdss) and 95A continuous drain current (Id) at 25°C (120.5A at Tc), it delivers robust performance in power management circuits. The device features an ultra-low on-resistance (Rds(on)) of 4.6mΩ at 20A, 10V, minimizing conduction losses and improving thermal efficiency. Packaged in a D2PAK (TO-263) surface-mount form factor, it is optimized for high-current, high-power-density designs. Although marked as obsolete, its specifications remain competitive for legacy or specialized applications requiring high current handling and low Rds(on).

NTB125N02RT4G Features

  • Low Rds(on): 4.6mΩ @ 20A, 10V ensures minimal power dissipation.
  • High Current Capability: Supports up to 95A (Ta) / 120.5A (Tc) for demanding loads.
  • Fast Switching: Gate charge (Qg) of 28nC @ 4.5V and input capacitance (Ciss) of 3440pF @ 20V enable efficient high-frequency operation.
  • Robust Voltage Tolerance: Vgs(max) of ±20V and Vgs(th) of 2V @ 250µA ensure reliable gate control.
  • Thermal Performance: Dissipates 1.98W (Ta) / 113.6W (Tc), suitable for thermally constrained environments.
  • Surface-Mount D2PAK Package: Ideal for automated assembly and compact PCB layouts.

NTB125N02RT4G Applications

This MOSFET excels in:

  • DC-DC Converters: High efficiency in step-down/step-up voltage regulation.
  • Motor Drives: Robust current handling for brushed/brushless motor control.
  • Power Supplies: Low Rds(on) reduces losses in synchronous rectification.
  • Battery Management Systems (BMS): Efficient switching in high-current discharge paths.
  • Automotive Electronics: Suitable for 24V systems requiring high reliability.

Conclusion of NTB125N02RT4G

The NTB125N02RT4G is a high-performance N-channel MOSFET offering low conduction losses, high current capacity, and reliable switching characteristics. While obsolete, its D2PAK packaging and optimized electrical specs make it a viable choice for legacy designs or applications prioritizing thermal efficiency and power density. Engineers should evaluate alternatives for new designs but may leverage this component in systems requiring its unique balance of performance and ruggedness.

FAQ

What voltage specification is listed for NTB125N02RT4G?
The listed voltage-related specification for NTB125N02RT4G is 24V.
What is NTB125N02RT4G?
What is the mounting type of NTB125N02RT4G?
What package or case is NTB125N02RT4G available in?
What operating temperature range does NTB125N02RT4G support?
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