onsemi

NTB45N06LT4G

NTB45N06LT4G Description

The NTB45N06LT4G from onsemi is an N-channel power MOSFET designed for high-efficiency switching applications. With a 60V drain-to-source voltage (Vdss) and 45A continuous drain current (Id), it offers robust performance in power management circuits. The device features a low on-resistance (Rds(on)) of 28mΩ at 5V gate drive, minimizing conduction losses. Packaged in a D2PAK (TO-263) surface-mount form factor, it is optimized for automated assembly and thermal dissipation. Though marked as Obsolete, its specifications remain competitive for legacy designs requiring reliable high-current handling.

NTB45N06LT4G Features

• Low Rds(on): 28mΩ @ 22.5A, 5V ensures reduced power dissipation.
• High Current Capacity: 45A (Ta) rating suits demanding loads.
• Fast Switching: Gate charge (Qg) of 32nC @ 5V and input capacitance (Ciss) of 1700pF @ 25V enable efficient high-frequency operation.
• Robust Gate Drive: Supports ±15V Vgs (max), enhancing noise immunity.
• Thermal Performance: 125W (Tj) power dissipation capability with proper heatsinking.
• Compliance: ROHS3 and REACH unaffected, meeting environmental standards.

NTB45N06LT4G Applications

Ideal for:

• DC-DC Converters: Leveraging low Rds(on) for synchronous rectification.
• Motor Control: High-current handling in H-bridge configurations.
• Power Supplies: Efficient switching in SMPS designs up to 60V.
• Automotive Systems: Auxiliary power modules (non-critical, given obsolescence).
• Industrial Load Switches: Robust performance in 24V/48V systems.

Conclusion of NTB45N06LT4G

The NTB45N06LT4G balances low conduction losses and high current capability, making it a strong candidate for legacy or cost-sensitive designs. While obsolete, its D2PAK package and 5V gate drive compatibility ensure compatibility with existing layouts. Engineers should evaluate alternatives for new designs but may still find value in remaining stock for repairs or specific high-efficiency applications.