onsemi_NTB5D0N15MC

onsemi
NTB5D0N15MC  
Single FETs, MOSFETs

onsemi
NTB5D0N15MC
278-NTB5D0N15MC
Ersa
onsemi-NTB5D0N15MC-datasheets-8763256.pdf
MOSFET - N-CHANNEL SHIELDED GATE
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NTB5D0N15MC Description

NTB5D0N15MC Description

The NTB5D0N15MC from onsemi is a high-performance N-channel shielded gate MOSFET utilizing advanced PowerTrench® technology, designed for demanding power management applications. With a 150V drain-to-source voltage (Vdss) and ultra-low on-resistance (Rds(on)) of 5mΩ at 97A, 10V, it delivers exceptional efficiency and thermal performance. The device supports continuous drain currents (Id) of 18A (Ta) or 139A (Tc), making it suitable for high-current applications. Its shielded gate structure minimizes switching losses and enhances EMI performance, while the surface-mount package (Tape & Reel) ensures compatibility with automated assembly processes.

NTB5D0N15MC Features

  • Low Rds(on): 5mΩ @ 97A, 10V ensures minimal conduction losses.
  • High Current Handling: 139A (Tc) continuous drain current for robust power delivery.
  • Fast Switching: Low gate charge (Qg) of 75nC @ 10V and input capacitance (Ciss) of 6300pF @ 75V enable high-frequency operation.
  • Thermal Efficiency: Power dissipation up to 214W (Tc) with excellent heat dissipation.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.
  • Wide Vgs Range: ±20V gate-source voltage tolerance for flexible drive requirements.

NTB5D0N15MC Applications

  • Switching Power Supplies: High-efficiency DC-DC converters and SMPS.
  • Motor Control: Brushed/brushless motor drives in industrial and automotive systems.
  • Battery Management: High-current protection circuits in energy storage systems.
  • LED Drivers: High-power LED lighting applications requiring low-loss switching.
  • Automotive Electronics: Engine control units (ECUs) and 48V mild hybrid systems.

Conclusion of NTB5D0N15MC

The NTB5D0N15MC stands out as a superior N-channel MOSFET for high-power applications, combining low Rds(on), high current capability, and thermal resilience. Its shielded gate design and PowerTrench® technology make it ideal for high-efficiency switching, motor drives, and automotive systems, offering a competitive edge over conventional MOSFETs. With onsemi's proven reliability, this device is a top choice for engineers seeking performance and durability in power electronics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTB5D0N15MC Documents

Download datasheets and manufacturer documentation for NTB5D0N15MC

Ersa Mult Dev Assembly 08/Jan/2024      
Ersa NTB5D0N15MC      
Ersa NTB5D0N15MC      
Ersa onsemi RoHS       onsemi REACH      

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