The NTB5D0N15MC from onsemi is a high-performance N-channel shielded gate MOSFET utilizing advanced PowerTrench® technology, designed for demanding power management applications. With a 150V drain-to-source voltage (Vdss) and ultra-low on-resistance (Rds(on)) of 5mΩ at 97A, 10V, it delivers exceptional efficiency and thermal performance. The device supports continuous drain currents (Id) of 18A (Ta) or 139A (Tc), making it suitable for high-current applications. Its shielded gate structure minimizes switching losses and enhances EMI performance, while the surface-mount package (Tape & Reel) ensures compatibility with automated assembly processes.
The NTB5D0N15MC stands out as a superior N-channel MOSFET for high-power applications, combining low Rds(on), high current capability, and thermal resilience. Its shielded gate design and PowerTrench® technology make it ideal for high-efficiency switching, motor drives, and automotive systems, offering a competitive edge over conventional MOSFETs. With onsemi's proven reliability, this device is a top choice for engineers seeking performance and durability in power electronics.
Download datasheets and manufacturer documentation for NTB5D0N15MC