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NTH4L020N120SC1  

Single FETs, MOSFETs

NTH4L020N120SC1 Description

The NTH4L020N120SC1 from onsemi is a high-performance Silicon Carbide (SiCFET) N-channel MOSFET designed for demanding power electronics applications. With a 1200V drain-to-source voltage (Vdss) and continuous drain current (Id) of 102A (Tc), this device delivers robust power handling in a TO-247 package. Its low on-resistance (Rds(on)) of 28mΩ at 60A, 20V ensures minimal conduction losses, while the SiC technology enables superior thermal performance and efficiency compared to traditional silicon-based MOSFETs. The device is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.

NTH4L020N120SC1 Features

• High Voltage & Current Rating: 1200V Vdss and 102A Id (Tc) for high-power applications.
• Low Rds(on): 28mΩ @ 60A, 20V reduces power dissipation and improves efficiency.
• SiC Technology: Offers higher thermal conductivity, faster switching speeds, and lower switching losses than silicon MOSFETs.
• Optimized Gate Charge: 220nC @ 20V ensures efficient drive characteristics.
• High Power Dissipation: 510W (Tc) capability for rugged performance in high-temperature environments.
• Robust Packaging: TO-247 through-hole mounting for reliable mechanical and thermal performance.
• Compliance: RoHS3, REACH unaffected, and ECCN EAR99 for global market suitability.

NTH4L020N120SC1 Applications

This MOSFET is ideal for:

• Electric Vehicle (EV) Power Systems: On-board chargers, DC-DC converters, and traction inverters.
• Renewable Energy: Solar inverters and wind power converters requiring high efficiency and reliability.
• Industrial Motor Drives: High-frequency switching applications with minimal losses.
• Switched-Mode Power Supplies (SMPS): High-voltage, high-efficiency designs.
• Uninterruptible Power Supplies (UPS): Critical power backup systems demanding robust performance.

Conclusion of NTH4L020N120SC1

The NTH4L020N120SC1 stands out as a high-efficiency, high-reliability SiC MOSFET, combining low conduction losses, superior thermal performance, and high power density. Its 1200V rating and 102A current capability make it a top choice for next-generation power electronics in automotive, industrial, and renewable energy applications. With onsemi's proven SiCFET technology, this device ensures long-term durability and performance in the most demanding environments.

NTH4L020N120SC1 Documents

Download datasheets and manufacturer documentation for NTH4L020N120SC1

Datasheets :

NTH4L020N120SC1      

PCN Packaging :

Packing quantity increase 28/Dec/2020      

PCN Design/Specification :

Dimension/Color Change 24/Feb/2021      

Environmental Information :

onsemi RoHS       onsemi REACH