onsemi

NTHL019N65S3H  

Single FETs, MOSFETs

NTHL019N65S3H Description

The NTHL019N65S3H from onsemi is a high-performance N-channel SuperFET® III MOSFET designed for demanding power applications. With a 650V drain-to-source voltage (Vdss) and 75A continuous drain current (Id), this device is engineered to deliver robust performance in high-power switching circuits. Its low on-resistance (Rds(on)) of 19.3mΩ at 10V gate drive ensures minimal conduction losses, while the 625W maximum power dissipation (Tc) makes it suitable for thermally challenging environments. The MOSFET features a TO-247-3 package, providing excellent thermal management and mechanical durability for through-hole mounting.

NTHL019N65S3H Features

• SuperFET® III Technology: Optimized for high efficiency and reduced switching losses, ideal for high-frequency applications.
• Low Gate Charge (Qg): 282nC at 10V ensures faster switching and lower drive losses compared to conventional MOSFETs.
• High Input Capacitance (Ciss): 15,993pF at 400V supports stable operation in high-voltage circuits.
• Wide Vgs Range: ±30V maximum gate-source voltage enhances flexibility in drive circuit design.
• Robust Thermal Performance: 625W power dissipation (Tc) and TO-247-3 package enable reliable operation in high-temperature environments.
• Compliance: ROHS3 and REACH unaffected, meeting stringent environmental and safety standards.

NTHL019N65S3H Applications

This MOSFET is particularly suited for:

• Switched-Mode Power Supplies (SMPS): High efficiency and low Rds(on) minimize energy loss in AC-DC and DC-DC converters.
• Motor Drives and Inverters: High current handling and voltage tolerance make it ideal for industrial and automotive motor control.
• Uninterruptible Power Supplies (UPS): Reliable performance under high-stress conditions ensures system stability.
• Solar and Renewable Energy Systems: Efficient power conversion in photovoltaic inverters and energy storage systems.
• High-Power Lighting: Suitable for LED drivers and HID ballasts requiring high-voltage switching.

Conclusion of NTHL019N65S3H

The NTHL019N65S3H stands out as a high-efficiency, high-reliability MOSFET for power electronics, combining low conduction losses, fast switching, and superior thermal performance. While it is not recommended for new designs, its proven performance in existing applications makes it a dependable choice for engineers seeking a robust solution for high-voltage, high-current systems. Its compliance with environmental standards further ensures suitability for global markets.

NTHL019N65S3H Documents

Download datasheets and manufacturer documentation for NTHL019N65S3H

PCN Assembly/Origin :

Assembly/Test Change 20/Jul/2023      

Datasheets :

NTHL019N65S3H      

PCN Packaging :

Packing quantity increase 28/Dec/2020      

HTML Datasheet :

NTHL019N65S3H      

PCN Design/Specification :

Dimension/Color Change 24/Feb/2021      

Environmental Information :

onsemi RoHS       onsemi REACH