onsemi_NTMFD4902NFT1G

onsemi
NTMFD4902NFT1G  
FET, MOSFET Arrays

onsemi
NTMFD4902NFT1G
289-NTMFD4902NFT1G
Ersa
onsemi-NTMFD4902NFT1G-datasheets-5646033.pdf
MOSFET 2N-CH 30V 10.3A 8DFN
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NTMFD4902NFT1G Description

NTMFD4902NFT1G Description

The NTMFD4902NFT1G is a MOSFET (Metal Oxide) from onsemi, designed for high-performance applications requiring low on-resistance and high current handling capabilities. This N-channel MOSFET is offered in an 8DFN package, making it suitable for surface-mount applications. Although the product is now obsolete, it was known for its excellent performance in various electronic systems.

NTMFD4902NFT1G Features

  • Logic Level Gate: Ideal for interfacing with logic level signals.
  • Low Input Capacitance (Ciss): 1150pF @ 15V, ensuring fast switching and reduced power consumption.
  • Low Gate Charge (Qg): 9.7nC @ 4.5V, contributing to high-speed operation.
  • Low Rds On: 6.5mOhm @ 10A, 10V, providing high efficiency in power applications.
  • High Drain to Source Voltage (Vdss): 30V, suitable for applications requiring high voltage tolerance.
  • Continuous Drain Current (Id): 10.3A @ 25°C, ensuring robust current handling capabilities.
  • Compliant with RoHS3: Environmentally friendly and suitable for green electronics.
  • REACH Unaffected: Compliant with European chemical regulations.

NTMFD4902NFT1G Applications

The NTMFD4902NFT1G is well-suited for applications where high current and low on-resistance are critical, such as:

  • Power Management Systems: Due to its high current handling and low on-resistance.
  • Automotive Electronics: Its high voltage tolerance makes it ideal for automotive applications.
  • Industrial Control Systems: The fast switching capabilities are beneficial in these systems.

Conclusion of NTMFD4902NFT1G

While the NTMFD4902NFT1G is now considered obsolete, it was a high-performance MOSFET known for its low on-resistance, high current handling, and fast switching capabilities. Its unique features made it ideal for power management systems, automotive electronics, and industrial control systems. Although no longer in production, its legacy remains in the high standards it set for similar models in the MOSFET category.

Tech Specifications

Operating Temperature
FET Feature
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
ECCN
Mounting Type
Product Status
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Series
Package / Case
Technology
Power - Max
REACH Status
Mfr
Current - Continuous Drain (Id) @ 25°C
HTSUS
Package
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)
Unit Weight
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTMFD4902NFT1G Documents

Download datasheets and manufacturer documentation for NTMFD4902NFT1G

Ersa Wafer Capacity Expansion 21/May/2015      
Ersa NTMFD4902NF      
Ersa Mult Dev EOL 01/Oct/2021      
Ersa NTMFD4902NF      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NTMFD4902NFT1G      

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