onsemi_NTMFS4C10NBT1G
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onsemi
NTMFS4C10NBT1G

278-NTMFS4C10NBT1G
PDF Datasheet
MOSFET N-CH 30V 16.4A/46A 5DFN

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Tech Specifications

HTS
COMPONENTS
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
987 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
18.6 nC @ 10 V
ECCN (US)
EAR99
PPAP
Unknown
Product Status
Last Time Buy
Supplier Device Package
5-DFN (5x6) (8-SOFL)
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NTMFS4C10NBT1G Description

NTMFS4C10NBT1G Description

The NTMFS4C10NBT1G is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 16.4A at 25°C, this device is ideal for a wide range of power management and switching applications.

NTMFS4C10NBT1G Features

  • High Input Capacitance (Ciss): The NTMFS4C10NBT1G boasts an impressive maximum input capacitance of 987 pF at 15V, ensuring fast switching speeds and reduced parasitic effects.
  • Low Gate Charge (Qg): With a maximum gate charge of 18.6 nC at 10V, this MOSFET minimizes power loss during switching, improving overall efficiency.
  • Robust Power Dissipation: Capable of dissipating up to 2.51W at ambient temperature (Ta) and 23.6W at case temperature (Tc), the NTMFS4C10NBT1G is well-suited for high-power applications.
  • Low Rds On: The device offers a maximum Rds On of 6.95mOhm at 30A and 10V, reducing conduction losses and improving efficiency.
  • Wide Operating Voltage Range: With a Vgs (Max) of ±20V and a Vgs(th) (Max) of 2.2V at 250µA, the NTMFS4C10NBT1G operates reliably across a broad voltage spectrum.
  • Compliance with Industry Standards: The NTMFS4C10NBT1G is REACH unaffected, RoHS3 compliant, and moisture sensitivity level (MSL) 1, ensuring compliance with environmental and industry regulations.

NTMFS4C10NBT1G Applications

The NTMFS4C10NBT1G is an excellent choice for various applications, including:

  • Power Management: Its high efficiency and low conduction losses make it ideal for power supply designs.
  • Motor Control: The device's robust power dissipation and low Rds On make it suitable for motor control applications.
  • Automotive Electronics: The NTMFS4C10NBT1G's high voltage and current ratings, along with its compliance with industry standards, make it a suitable choice for automotive electronics.
  • Industrial Control: The device's performance benefits, such as low gate charge and high input capacitance, make it ideal for industrial control applications.

Conclusion of NTMFS4C10NBT1G

The NTMFS4C10NBT1G is a versatile and high-performance N-Channel MOSFET from onsemi, offering a combination of high input capacitance, low gate charge, and robust power dissipation. Its compliance with industry standards and wide operating voltage range make it an ideal choice for a variety of applications, including power management, motor control, automotive electronics, and industrial control. With its unique features and advantages over similar models, the NTMFS4C10NBT1G is a reliable and efficient solution for demanding electronic designs.

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