onsemi_NTMFS6H800NLT1G

onsemi
NTMFS6H800NLT1G  
Single FETs, MOSFETs

onsemi
NTMFS6H800NLT1G
278-NTMFS6H800NLT1G
Ersa
onsemi-NTMFS6H800NLT1G-datasheets-3318554.pdf
MOSFET N-CH 80V 30A/224A 5DFN
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NTMFS6H800NLT1G Description

NTMFS6H800NLT1G Description

The NTMFS6H800NLT1G is a high-performance N-Channel MOSFET designed and manufactured by onsemi. It boasts an impressive 80V drain-to-source voltage (Vdss) and can handle continuous drain currents of up to 30A at 25°C (Ta) and 224A at case temperature (Tc). With a maximum power dissipation of 3.9W at ambient temperature (Ta) and 214W at case temperature (Tc), this MOSFET is well-suited for demanding applications.

NTMFS6H800NLT1G Features

  • Technology: MOSFET (Metal Oxide)
  • Input Capacitance (Ciss): 6900 pF @ 40V
  • Gate Charge (Qg): 112 nC @ 10V
  • Rds On (Max): 1.9mOhm @ 50A, 10V
  • Vgs(th) (Max): 2V @ 330µA
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
  • Vgs (Max): ±20V
  • Current - Continuous Drain (Id): 30A (Ta), 224A (Tc)
  • Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Base Product Number: NTMFS6

NTMFS6H800NLT1G Applications

The NTMFS6H800NLT1G is ideal for a variety of applications where high voltage and current handling capabilities are required. Some specific use cases include:

  1. Power Electronics: Due to its high voltage and current ratings, this MOSFET is well-suited for power electronics applications such as power supplies, motor drives, and battery management systems.
  2. Automotive: The NTMFS6H800NLT1G can be used in automotive applications like electric vehicle (EV) charging systems, inverter drives, and power windows.
  3. Industrial Control: This MOSFET is suitable for industrial control applications such as motor control, robotics, and automation systems.

Conclusion of NTMFS6H800NLT1G

The NTMFS6H800NLT1G is a powerful N-Channel MOSFET that offers exceptional performance and reliability. Its high voltage and current ratings, combined with its low Rds On and gate charge, make it an ideal choice for demanding applications in power electronics, automotive, and industrial control. With its REACH unaffected status and RoHS3 compliance, this MOSFET is also environmentally friendly, making it a responsible choice for manufacturers.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Operating Junction Temperature (°C)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTMFS6H800NLT1G Documents

Download datasheets and manufacturer documentation for NTMFS6H800NLT1G

Ersa Product Change Notification (PDF)      

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