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NTMFS6H801NT1G

The NTMFS6H801NT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a high voltage N-channel MOSFET that is designed for use in a variety of power electronic applications.

Description:

The NTMFS6H801NT1G is a high voltage N-channel MOSFET with a drain-source voltage (Vds) of 80V, a continuous drain current (Id) of 7.9A, and a gate-source voltage (Vgs) of ±20V. It is available in a TO-220 package, which is a popular package for power MOSFETs.

Features:

• High voltage N-channel MOSFET
• Drain-source voltage (Vds) of 80V
• Continuous drain current (Id) of 7.9A
• Gate-source voltage (Vgs) of ±20V
• Low on-state resistance (Rds(on))
• Fast switching speed
• High input impedance
• Suitable for use in a wide range of power electronic applications

Applications:

The NTMFS6H801NT1G is suitable for use in a variety of power electronic applications, including:

• Switch mode power supplies (SMPS)
• Motor control
• Battery charging and protection circuits
• Inverters
• DC-DC converters
• Class D audio amplifiers

It is important to note that the NTMFS6H801NT1G is a high voltage MOSFET and should be used in applications where the voltage and current requirements are within the specified limits. Additionally, proper heat sinking and gate drive circuitry should be used to ensure reliable operation.