The NTP190N65S3HF from onsemi is a high-performance N-channel MOSFET designed for demanding power management applications. With a 650V drain-to-source voltage (Vdss) and 20A continuous drain current (Id), it is engineered to deliver robust performance in high-voltage circuits. Part of the FRFET® and SuperFET® III series, this device leverages advanced Metal Oxide Semiconductor (MOSFET) technology to achieve low conduction losses and high switching efficiency. Its 190mΩ maximum on-resistance (Rds(on)) at 10V gate drive ensures minimal power dissipation, making it suitable for energy-efficient designs. Packaged in a TO-220-3 through-hole format, it is ideal for applications requiring reliable thermal management.
This MOSFET excels in high-voltage, high-efficiency applications, including:
The NTP190N65S3HF stands out as a high-efficiency, high-voltage MOSFET tailored for power electronics requiring low Rds(on), fast switching, and robust thermal performance. While marked as "Not For New Designs", its proven reliability in industrial, automotive, and renewable energy applications makes it a strong choice for legacy or cost-sensitive projects. Its SuperFET® III technology ensures superior performance compared to conventional MOSFETs, making it ideal for designers prioritizing efficiency and durability.
Download datasheets and manufacturer documentation for NTP190N65S3HF