onsemi_NTP190N65S3HF

onsemi
NTP190N65S3HF  
Single FETs, MOSFETs

onsemi
NTP190N65S3HF
278-NTP190N65S3HF
Ersa
onsemi-NTP190N65S3HF-datasheets-8628893.pdf
MOSFET N-CH 650V 20A TO220-3
In Stock : 600

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NTP190N65S3HF Description

NTP190N65S3HF Description

The NTP190N65S3HF from onsemi is a high-performance N-channel MOSFET designed for demanding power management applications. With a 650V drain-to-source voltage (Vdss) and 20A continuous drain current (Id), it is engineered to deliver robust performance in high-voltage circuits. Part of the FRFET® and SuperFET® III series, this device leverages advanced Metal Oxide Semiconductor (MOSFET) technology to achieve low conduction losses and high switching efficiency. Its 190mΩ maximum on-resistance (Rds(on)) at 10V gate drive ensures minimal power dissipation, making it suitable for energy-efficient designs. Packaged in a TO-220-3 through-hole format, it is ideal for applications requiring reliable thermal management.

NTP190N65S3HF Features

  • High Voltage Rating: 650V Vdss for robust operation in industrial and automotive systems.
  • Low Rds(on): 190mΩ @ 10A, 10V reduces conduction losses, improving efficiency.
  • Fast Switching: Low gate charge (Qg) of 34nC @ 10V minimizes switching losses.
  • High Power Handling: 162W max power dissipation (Tc) ensures reliability under high loads.
  • Wide Gate Drive Range: ±30V Vgs(max) offers flexibility in drive circuit design.
  • Advanced Technology: SuperFET® III enhances avalanche ruggedness and thermal performance.
  • Compliance: ROHS3 and REACH compliant, meeting environmental standards.

NTP190N65S3HF Applications

This MOSFET excels in high-voltage, high-efficiency applications, including:

  • Switched-Mode Power Supplies (SMPS): Optimizes performance in AC-DC and DC-DC converters.
  • Motor Drives: Provides reliable switching in industrial and automotive motor control systems.
  • Solar Inverters: Ensures efficient energy conversion in renewable energy systems.
  • Uninterruptible Power Supplies (UPS): Enhances power delivery and reliability.
  • Lighting Systems: Suitable for high-power LED drivers and ballasts.

Conclusion of NTP190N65S3HF

The NTP190N65S3HF stands out as a high-efficiency, high-voltage MOSFET tailored for power electronics requiring low Rds(on), fast switching, and robust thermal performance. While marked as "Not For New Designs", its proven reliability in industrial, automotive, and renewable energy applications makes it a strong choice for legacy or cost-sensitive projects. Its SuperFET® III technology ensures superior performance compared to conventional MOSFETs, making it ideal for designers prioritizing efficiency and durability.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTP190N65S3HF Documents

Download datasheets and manufacturer documentation for NTP190N65S3HF

Ersa Mult Dev 23/Oct/2023      
Ersa NTP190N65S3HF      
Ersa onsemi RoHS       Material Declaration NTP190N65S3HF      

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