onsemi

FDB047N10  

Single FETs, MOSFETs

The FDB047N10 is a high voltage N-channel MOSFET manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FDB047N10 is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (VDS) of up to 100V, a continuous drain current (ID) of up to 4.7A, and a gate-source voltage (VGS) of up to 10V. It features a low on-state resistance (RDS(on)) of 4.2 mΩ max, which helps to minimize power dissipation and improve efficiency.

Features:

• N-channel, enhancement mode MOSFET
• VDS of up to 100V
• ID of up to 4.7A
• VGS of up to 10V
• Low on-state resistance (RDS(on)) of 4.2 mΩ max
• Suitable for use in a wide range of power electronic applications

Applications:

The FDB047N10 is well-suited for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Energy management systems
• Battery management systems
• DC-DC converters
• Inverters
• Switch mode power supplies (SMPS)
• Class D audio amplifiers

Overall, the FDB047N10 is a high-performance MOSFET that offers excellent electrical characteristics and reliability, making it a popular choice for use in a wide range of power electronic applications.

FDB047N10 Documents

Download datasheets and manufacturer documentation for FDB047N10

PCN Assembly/Origin :

Assembly Change 09/May/2023      

Datasheets :

FDB047N10 Datasheet      

PCN Packaging :

Mult Devices 24/Oct/2017       TO263 31/Aug/2016      

PCN Design/Specification :

SOA curve 01/Jul/2013       Description Chg 01/Apr/2016      

Environmental Information :

onsemi RoHS       Material Declaration FDB047N10