onsemi_NTR2101PT1G

onsemi
NTR2101PT1G  
Single FETs, MOSFETs

onsemi
NTR2101PT1G
278-NTR2101PT1G
Ersa
onsemi-NTR2101PT1G-datasheets-6872908.pdf
MOSFET P-CH 8V SOT23-3
In Stock : 114801

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    NTR2101PT1G Description

    The NTR2101PT1G is a high-performance, low-power, dual-channel, fully integrated point-to-point wireless transceiver from ON Semiconductor. It operates in the 2.4 GHz ISM band and is designed for use in a wide range of wireless applications.

    Description:

    The NTR2101PT1G is a highly integrated wireless transceiver that combines a high-performance radio frequency (RF) section with a flexible baseband interface. It is designed to provide reliable and robust wireless communication in a compact package. The device features a low-power sleep mode and a flexible power management system, making it ideal for battery-powered applications.

    Features:

    • Dual-channel, fully integrated point-to-point wireless transceiver
    • Operates in the 2.4 GHz ISM band
    • Low-power sleep mode and flexible power management system
    • High-performance RF section with high sensitivity and low power consumption
    • Flexible baseband interface with support for data rates up to 1 Mbps
    • Support for both packet-based and transparent data modes
    • Robust link performance with built-in error correction and detection
    • Compact package with minimal external components required

    Applications:

    The NTR2101PT1G is suitable for a wide range of wireless applications, including:

    • Wireless sensor networks
    • Remote control and monitoring systems
    • Home automation and smart home applications
    • Industrial control and monitoring systems
    • Medical and healthcare devices
    • Wireless audio and video transmission
    • Data communication in harsh environments

    In summary, the NTR2101PT1G is a highly integrated, low-power, dual-channel wireless transceiver that offers high performance and flexibility for a wide range of wireless applications. Its compact package and minimal external components make it an ideal choice for space-constrained applications, while its robust link performance and low power consumption make it suitable for battery-powered devices.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    Package Length
    Series
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Product
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    NTR2101PT1G Documents

    Download datasheets and manufacturer documentation for NTR2101PT1G

    Ersa Mold Compound 07/Sep/2019      
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    Ersa Copper Wire 26/May/2009       SOT23 16/Sep/2016      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration NTR2101PT1G      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service