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NTRV4101PT1G

NTRV4101PT1G is a high voltage, high power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and industrial control systems.

Description:

The NTRV4101PT1G is a N-channel MOSFET transistor with a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 41A. It has a power dissipation (PD) of 155W and an operating temperature range of -55°C to 175°C. The transistor is available in a PowerPAK SO-8 package.

Features:

• High voltage and current handling capability
• Low on-state resistance (RDS(on))
• High switching speed
• Low gate charge
• Avalanche energy capable
• Built-in bootstrap diode

Applications:

• Motor control
• Power supplies
• Industrial control systems
• Battery charging systems
• High voltage switching applications

The NTRV4101PT1G is a high performance MOSFET transistor that is suitable for use in a wide range of applications that require high voltage and current handling capability. Its low on-state resistance and high switching speed make it an ideal choice for power conversion and motor control applications. Additionally, its built-in bootstrap diode and avalanche energy capability make it suitable for use in high voltage switching applications.