onsemi_NVBG070N120M3S
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onsemi
NVBG070N120M3S

278-NVBG070N120M3S
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SILICON CARBIDE (SIC) MOSFET-ELI
28 Weeks

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Tech Specifications

Configuration
Single Hex Source
Typical Turn-Off Delay Time (ns)
30
Id - Continuous Drain Current
25 A
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V
T j Max (°C)
175
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Typical Rise Time (ns)
12
PPAP
Yes
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NVBG070N120M3S Description

NVBG070N120M3S Description

The NVBG070N120M3S is a Silicon Carbide (SiC) MOSFET-ELI manufactured by onsemi. This advanced semiconductor device is designed for high-performance applications, offering superior technical specifications and performance benefits. With its unique features and advantages, the NVBG070N120M3S stands out among similar models in the market.

NVBG070N120M3S Features

  • Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
  • Product Status: Active
  • Drain to Source Voltage (Vdss): 1200 V
  • Power Dissipation (Max): 172W (Tc)
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • REACH Status: REACH Unaffected
  • Manufacturer: onsemi
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • Grade: Automotive
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 7mA
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • HTSUS: 8541.29.0095
  • Package: Tape & Reel (TR)

NVBG070N120M3S Applications

The NVBG070N120M3S is ideal for a wide range of applications due to its exceptional performance and reliability. Some specific use cases include:

  1. Automotive: The automotive grade of this MOSFET makes it suitable for various automotive applications, such as electric vehicle (EV) charging systems, powertrain control, and battery management systems.
  2. Industrial: The high power dissipation and robust design make it ideal for industrial applications, such as motor control, power supplies, and renewable energy systems.
  3. Aerospace: The NVBG070N120M3S can be used in aerospace applications, such as power management systems and control systems, where reliability and performance are critical.

Conclusion of NVBG070N120M3S

The NVBG070N120M3S is a high-performance Silicon Carbide (SiC) MOSFET-ELI that offers superior technical specifications and performance benefits. Its unique features and advantages make it an ideal choice for various applications, including automotive, industrial, and aerospace. With its active product status and compliance with industry standards, the NVBG070N120M3S is a reliable and efficient solution for demanding applications in the electronics industry.

FAQ

What is NVBG070N120M3S?
NVBG070N120M3S is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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