onsemi_NVMFS5834NLT1G

onsemi
NVMFS5834NLT1G  
Single FETs, MOSFETs

onsemi
NVMFS5834NLT1G
278-NVMFS5834NLT1G
Ersa
onsemi-NVMFS5834NLT1G-datasheets-8172102.pdf
MOSFET N-CH 40V 14A/75A 5DFN
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NVMFS5834NLT1G Description

The NVMFS5834NLT1G is a MOSFET transistor produced by ON Semiconductor. It is a N-Channel, Logic Level enhancement mode device that is designed for low voltage, high current applications.

Description:

The NVMFS5834NLT1G is a high-density, vertical D^2PAK power MOSFET with a drain-to-source voltage (VDS) of 55V and a continuous drain current (ID) of 34A. It features low on-state resistance (RDS(on)) and fast switching speeds, making it ideal for a wide range of applications.

Features:

  • N-Channel, Logic Level enhancement mode device
  • Drain-to-Source voltage (VDS) of 55V
  • Continuous Drain current (ID) of 34A
  • Low on-state resistance (RDS(on))
  • Fast switching speeds
  • High-density, vertical D^2PAK package

Applications:

The NVMFS5834NLT1G is suitable for a wide range of applications, including:

  • Motor control
  • DC-DC converters
  • Power management in portable devices
  • Industrial control systems
  • LED lighting
  • Class-D audio amplifiers

In summary, the NVMFS5834NLT1G is a high-performance MOSFET transistor that offers low on-state resistance and fast switching speeds, making it ideal for use in a variety of power management and motor control applications. Its high-density, vertical D^2PAK package also makes it suitable for use in space-constrained applications.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Qualification
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFS5834NLT1G Documents

Download datasheets and manufacturer documentation for NVMFS5834NLT1G

Ersa NTMFS5834NL      
Ersa Mult Dev EOL 01/Oct/2021      
Ersa NTMFS5834NL      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFS5834NLT1G      

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