onsemi_NVMFS5C406NT1G

onsemi
NVMFS5C406NT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C406NT1G
278-NVMFS5C406NT1G
Ersa
onsemi-NVMFS5C406NT1G-datasheets-12579361.pdf
MOSFET N-CH 40V 52A/353A 5DFN
In Stock : 1500

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NVMFS5C406NT1G Description

NVMFS5C406NT1G Description

The NVMFS5C406NT1G from onsemi is a high-performance N-channel MOSFET designed for demanding automotive and industrial applications. With a 40V drain-to-source voltage (Vdss) and an impressive continuous drain current (Id) of 52A (Ta) / 353A (Tc), this device delivers robust power handling in a compact 5DFN surface-mount package. It features an ultra-low on-resistance (Rds(on)) of just 0.8mΩ at 10V gate drive, ensuring minimal conduction losses and improved efficiency. The MOSFET is AEC-Q101 qualified, making it ideal for automotive systems where reliability under harsh conditions is critical.

NVMFS5C406NT1G Features

  • Low Rds(on): 0.8mΩ @ 50A, 10V for reduced power dissipation.
  • High Current Capability: Supports up to 353A (Tc) for high-power applications.
  • Automotive Grade: Compliant with AEC-Q101, ensuring reliability in automotive environments.
  • Optimized Gate Charge (Qg): 110nC @ 10V for fast switching and reduced switching losses.
  • Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive requirements.
  • Thermal Performance: 179W (Tc) power dissipation enables efficient heat management.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.

NVMFS5C406NT1G Applications

This MOSFET is ideal for high-efficiency power conversion and motor control applications, including:

  • Automotive Systems: Electric power steering (EPS), 48V mild hybrid systems, and DC-DC converters.
  • Industrial Power Supplies: High-current synchronous rectification and battery management systems (BMS).
  • Motor Drives: Brushless DC (BLDC) and servo motor controllers requiring low Rds(on) and high thermal performance.
  • Load Switches & OR-ing Circuits: Where low conduction loss and fast switching are critical.

Conclusion of NVMFS5C406NT1G

The NVMFS5C406NT1G stands out as a high-efficiency, automotive-grade MOSFET with exceptional current handling, ultra-low Rds(on), and superior thermal performance. Its 5DFN package ensures space savings without compromising power density, making it an excellent choice for automotive, industrial, and high-performance switching applications. With onsemi's proven reliability, this MOSFET is a top-tier solution for engineers seeking high power efficiency and rugged durability in demanding environments.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Operating Junction Temperature (°C)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFS5C406NT1G Documents

Download datasheets and manufacturer documentation for NVMFS5C406NT1G

Ersa Wafer Fab Capacity Expansion 14/Dec/2021      
Ersa NVMFS5C406N      
Ersa MPN Label Update 08/Sep/2021       MPN label update 11/Oct/2021      
Ersa NVMFS5C406N      
Ersa NVMFS5Cx0xN 27/Jul/2022      
Ersa onsemi RoHS       Material Declaration NVMFS5C406NT1G       onsemi REACH      

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