onsemi_NVMFS5C466NLT1G

onsemi
NVMFS5C466NLT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C466NLT1G
278-NVMFS5C466NLT1G
Ersa
onsemi-NVMFS5C466NLT1G-datasheets-2347416.pdf
MOSFET N-CH 40V 16A/52A 5DFN
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    NVMFS5C466NLT1G Description

    The NVMFS5C466NLT1G is a high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

    Description:

    The NVMFS5C466NLT1G is a N-channel MOSFET with a drain-source voltage (VDS) of -450V and a continuous drain current (ID) of 4.6A. It features a low on-state resistance (RDS(on)) of 45 milliohms maximum at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.

    Features:

    • High voltage rating: -450V drain-source voltage
    • Low on-state resistance: 45 milliohms maximum at VGS = 10V
    • High switching speed: Fast switching times for improved efficiency
    • Low gate charge: Reduces switching losses and improves efficiency
    • Avalanche rugged: Designed to withstand high-energy transients
    • Logic level gate drive compatible: Easy to drive with low-voltage control signals
    • RoHS compliant: Environmentally friendly and suitable for use in green energy applications

    Applications:

    The NVMFS5C466NLT1G is suitable for a wide range of power electronic applications, including:

    1. Motor control: Brushless DC motor control, AC motor control, and stepper motor control
    2. Power supplies: AC/DC power conversion, DC/DC power conversion, and battery charging
    3. Energy management: Solar energy conversion, energy storage systems, and energy distribution
    4. Industrial automation: Servo drives, robotics, and programmable logic controllers (PLCs)
    5. Lighting: LED lighting, street lighting, and indoor lighting systems

    Overall, the NVMFS5C466NLT1G is a versatile and efficient MOSFET that offers high performance and reliability for a wide range of power electronic applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Grade
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Qualification
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    NVMFS5C466NLT1G Documents

    Download datasheets and manufacturer documentation for NVMFS5C466NLT1G

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