The NVMFS5C466NLT1G is a high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.
Description:
The NVMFS5C466NLT1G is a N-channel MOSFET with a drain-source voltage (VDS) of -450V and a continuous drain current (ID) of 4.6A. It features a low on-state resistance (RDS(on)) of 45 milliohms maximum at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.
Features:
High voltage rating: -450V drain-source voltage
Low on-state resistance: 45 milliohms maximum at VGS = 10V
High switching speed: Fast switching times for improved efficiency
Low gate charge: Reduces switching losses and improves efficiency
Avalanche rugged: Designed to withstand high-energy transients
Logic level gate drive compatible: Easy to drive with low-voltage control signals
RoHS compliant: Environmentally friendly and suitable for use in green energy applications
Applications:
The NVMFS5C466NLT1G is suitable for a wide range of power electronic applications, including:
Motor control: Brushless DC motor control, AC motor control, and stepper motor control
Power supplies: AC/DC power conversion, DC/DC power conversion, and battery charging
Energy management: Solar energy conversion, energy storage systems, and energy distribution
Industrial automation: Servo drives, robotics, and programmable logic controllers (PLCs)
Lighting: LED lighting, street lighting, and indoor lighting systems
Overall, the NVMFS5C466NLT1G is a versatile and efficient MOSFET that offers high performance and reliability for a wide range of power electronic applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
NVMFS5C466NLT1G Documents
Download datasheets and manufacturer documentation for NVMFS5C466NLT1G
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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