onsemi

FQB6N80TM

FQB6N80TM Description

The FQB6N80TM is an advanced MOSFET N-CH 800V 5.8A D2PAK from onsemi, designed for high-performance applications. With a maximum drain-to-source voltage of 800V and a continuous drain current of 5.8A at 25°C, this device offers exceptional performance in demanding environments. The FQB6N80TM features a low on-resistance of 1.95 Ohm at 2.9A and 10V, ensuring efficient power dissipation and minimal power loss. The device is designed for surface mount applications, making it ideal for compact and space-constrained designs.

FQB6N80TM Features

• Technology: MOSFET (Metal Oxide)
• Input Capacitance (Ciss): 1500 pF @ 25 V
• Gate Charge (Qg): 31 nC @ 10 V
• Drain to Source Voltage (Vdss): 800 V
• Power Dissipation: 3.13W (Ta), 158W (Tc)
• Vgs (Max): ±30V
• Rds On (Max): 1.95 Ohm @ 2.9A, 10V
• Vgs(th) (Max): 5V @ 250µA
• Series: QFET®
• Current - Continuous Drain (Id): 5.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Mounting Type: Surface Mount
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant

FQB6N80TM Applications

The FQB6N80TM is ideal for a wide range of applications where high voltage and current handling are required. Some specific use cases include:

1. Power Electronics: Due to its high voltage and current ratings, the FQB6N80TM is suitable for power electronics applications such as power supplies, converters, and inverters.
2. Industrial Automation: The device's robust performance makes it ideal for industrial automation systems, including motor control and drives.
3. Automotive: The FQB6N80TM can be used in automotive applications such as electric vehicle charging systems, battery management, and powertrain control.
4. Renewable Energy: The device's high voltage and current capabilities make it suitable for renewable energy applications like solar inverters and wind turbine control systems.

Conclusion of FQB6N80TM

The FQB6N80TM from onsemi is a high-performance MOSFET designed for demanding applications requiring high voltage and current handling. Its low on-resistance, high power dissipation capabilities, and compact surface mount design make it an ideal choice for power electronics, industrial automation, automotive, and renewable energy applications. Despite being classified as obsolete, the FQB6N80TM continues to offer reliable performance and unique advantages over similar models, making it a valuable option for designers seeking a high-quality, high-voltage MOSFET solution.