onsemi_NVMFS5C604NLT1G

onsemi
NVMFS5C604NLT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C604NLT1G
278-NVMFS5C604NLT1G
Ersa
onsemi-NVMFS5C604NLT1G-datasheets-8433489.pdf
MOSFET N-CH 60V 40A/287A 5DFN
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NVMFS5C604NLT1G Description

NVMFS5C604NLT1G Description

The NVMFS5C604NLT1G is a high-performance MOSFET (Metal Oxide) from onsemi, designed for automotive applications. This N-Channel device offers a drain-to-source voltage (Vdss) of 60V and can handle continuous drain currents of up to 40A at 25°C (Ta) and 287A at case temperature (Tc). With a maximum power dissipation of 3.9W at ambient temperature (Ta) and 200W at case temperature (Tc), it is suitable for demanding applications requiring high current and voltage capabilities.

NVMFS5C604NLT1G Features

  • High Voltage and Current Ratings: The NVMFS5C604NLT1G boasts a 60V drain-to-source voltage and can handle up to 40A continuous drain current at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds On of 1.2mOhm at 50A and 10V, this MOSFET offers low conduction losses, improving efficiency in power management systems.
  • Surface Mount Package: The 5DFN package allows for compact and efficient PCB layout, suitable for space-constrained automotive applications.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications, ensuring reliability and durability in harsh environments.
  • Compliance with Industry Standards: The NVMFS5C604NLT1G is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring compliance with global regulations.

NVMFS5C604NLT1G Applications

The NVMFS5C604NLT1G is well-suited for a variety of automotive applications, including:

  • Electric Vehicle (EV) Systems: Power management and control systems in electric and hybrid vehicles, where high voltage and current ratings are critical.
  • Battery Management: Efficient battery charging and discharging circuits, benefiting from the low on-resistance and high current capabilities.
  • Motor Control: High-power motor drives and control systems, leveraging the device's ability to handle large currents and voltages.

Conclusion of NVMFS5C604NLT1G

The NVMFS5C604NLT1G from onsemi is a robust and reliable MOSFET designed for high-performance automotive applications. Its combination of high voltage and current ratings, low on-resistance, and automotive-grade design make it an excellent choice for demanding power management and motor control systems. With compliance to industry standards and a compact surface-mount package, the NVMFS5C604NLT1G is a versatile solution for engineers looking to optimize performance and efficiency in their automotive designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

NVMFS5C604NLT1G Documents

Download datasheets and manufacturer documentation for NVMFS5C604NLT1G

Ersa Wafer Fab 19/Feb/2021      
Ersa NVMFS5C604NL      
Ersa NVMFS5C604NL      
Ersa NVMFS5Cx0xN 27/Jul/2022       T6 40V/60V Datasheet Update 30/Dec/2015      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFS5C604NLT1G      

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