onsemi_NVMFWS2D3P04M8LT1G

onsemi
NVMFWS2D3P04M8LT1G  
Single FETs, MOSFETs

onsemi
NVMFWS2D3P04M8LT1G
278-NVMFWS2D3P04M8LT1G
Ersa
onsemi-NVMFWS2D3P04M8LT1G-datasheets-8228531.pdf
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ISO9001
Quality Policy
ISO45001
ISO14001

NVMFWS2D3P04M8LT1G Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the NVMFWS2D3P04M8LT1G belongs to can be classified under the Discrete Semiconductors. NVMFWS2D3P04M8LT1G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. NVMFWS2D3P04M8LT1G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

V gs (V)
Configuration
Package Name
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
V gs(th) Max (V)
Typical Rise Time (ns)
PPAP
OPN in older Technology
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Q gd Typ @ V GS = 4.5 V (nC)
Technology
REACH Status
Channel Type
Wide SOA Mosfets
EU RoHS
Maximum Continuous Drain Current (A)
MSL Temp (°C)
Moisture Sensitivity Level (MSL)
Status
Operating Temperature
Channel Polarity
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
R DS(on) Max @ V GS = 10 V (mΩ)
ECCN
Grade
Supplier Temperature Grade
V (BR)DSS Min (V)
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
MSL Type
Pin Count
Mounting
C rss Typ (pF)
Qualification
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
P D Max (W)
USHTS
Typical Gate Charge @ Vgs (nC)
R DS(on) Max @ V GS = 4.5 V (mΩ)
Typical Input Capacitance @ Vds (pF)
Category
Case Outline
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
I D Max (A)
Maximum Power Dissipation (mW)
C oss Typ (pF)
Gate Level
Supplier Device Package
Minimum Operating Temperature (°C)
C iss Typ (pF)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Q g Typ @ V GS = 4.5 V (nC)
RoHS Status
Q rr Typ (nC)
R DS(on) Max @ V GS = 2.5 V (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Silicon Family
Package Length
Typical Gate Charge @ 10V (nC)
Series
Operating Junction Temperature (°C)
Type
Part Status
Package Width
Q g Typ @ V GS = 10 V (nC)

NVMFWS2D3P04M8LT1G Documents

Download datasheets and manufacturer documentation for NVMFWS2D3P04M8LT1G

Ersa NVMFS2D3P04M8L      

Shopping Guide

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