onsemi_SMMBT2222AWT1G

onsemi
SMMBT2222AWT1G  
Single Bipolar Transistors

onsemi
SMMBT2222AWT1G
276-SMMBT2222AWT1G
Ersa
onsemi-SMMBT2222AWT1G-datasheets-4396629.pdf
TRANS NPN 40V 0.6A SC70-3
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SMMBT2222AWT1G Description

SMMBT2222AWT1G Description

The SMMBT2222AWT1G is a high-performance NPN bipolar transistor designed and manufactured by ON Semiconductor. This device is specifically engineered for applications that require high-frequency operation, robust current handling, and reliable performance in various electronic systems. With a maximum frequency of transition at 300 MHz, the SMMBT2222AWT1G ensures efficient signal processing and minimal distortion. The device is designed to handle a maximum collector current (Ic) of 600 mA and a maximum power dissipation of 150 mW, making it suitable for a wide range of applications.

SMMBT2222AWT1G Features

  • High-Frequency Operation: The SMMBT2222AWT1G operates at a maximum frequency of transition of 300 MHz, ensuring efficient signal processing and minimal distortion in high-speed applications.
  • Robust Current Handling: With a maximum collector current (Ic) of 600 mA, the SMMBT2222AWT1G can handle significant current loads, making it suitable for power-intensive applications.
  • Low Saturation Voltage: The device features a low Vce saturation voltage of 1V at 50mA and 500mA, which reduces power consumption and improves efficiency in low-voltage applications.
  • Reliable Breakdown Voltage: The SMMBT2222AWT1G has a maximum collector-emitter breakdown voltage of 40V, providing robust protection against voltage surges and ensuring reliable operation in high-voltage environments.
  • High DC Current Gain: The device offers a minimum DC current gain (hFE) of 100 at 150mA and 10V, ensuring consistent performance and minimal signal loss in amplification applications.
  • Surface Mount Technology: The SMMBT2222AWT1G is designed for surface mount applications, allowing for compact and efficient integration into printed circuit boards (PCBs).
  • RoHS Compliance: The device is compliant with the RoHS3 directive, making it suitable for environmentally friendly applications and meeting regulatory requirements.

SMMBT2222AWT1G Applications

The SMMBT2222AWT1G is ideal for a wide range of applications, including:

  • Amplifiers: Due to its high-frequency operation and robust current handling, the SMMBT2222AWT1G is well-suited for use in audio and radio frequency (RF) amplifiers.
  • Switching Applications: The low saturation voltage and high breakdown voltage make the SMMBT2222AWT1G an excellent choice for switching applications, such as power supplies and motor control systems.
  • Signal Processing: The device's high-frequency capabilities and low distortion make it ideal for use in signal processing applications, such as filters and mixers.
  • Automotive Electronics: The SMMBT2222AWT1G's robust performance and reliability make it suitable for use in automotive electronics, such as engine control units (ECUs) and infotainment systems.

Conclusion of SMMBT2222AWT1G

The SMMBT2222AWT1G is a versatile and high-performance NPN bipolar transistor that offers a combination of high-frequency operation, robust current handling, and reliable performance. Its unique features, such as low saturation voltage and high DC current gain, make it an ideal choice for a wide range of applications, including amplifiers, switching applications, signal processing, and automotive electronics. With its RoHS compliance and surface mount technology, the SMMBT2222AWT1G is a reliable and environmentally friendly solution for demanding electronic systems.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
Continuous Collector Current
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Qualification
Maximum DC Collector Current
Technology
Gain Bandwidth Product fT
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS

SMMBT2222AWT1G Documents

Download datasheets and manufacturer documentation for SMMBT2222AWT1G

Ersa Bond Wire 07/Mar/2020      
Ersa MMBT/SMMBT2222AWT1 Datasheet      
Ersa Green Compound Update 04/Mar/2015      
Ersa onsemi RoHS       Material Declaration SMMBT2222AWT1G       onsemi REACH      

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