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SMUN5213DW1T1G
293-SMUN5213DW1T1G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
12 Weeks
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Tech Specifications
Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
SMUN5213DW1T1G Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
FAQ
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Yes. SMUN5213DW1T1G currently shows 13758 unit(s) in stock.
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