onsemi_SMUN5312DW1T1G
original

onsemi
SMUN5312DW1T1G

293-SMUN5312DW1T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
9 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
60
Lead Free
Lead Free
Max Collector Current
100mA
Max Power Dissipation
187mW
Package Quantity
3000
Show More

SMUN5312DW1T1G Description

SMUN5312DW1T1G Description

The SMUN5312DW1T1G, manufactured by onsemi, is a Bipolar Transistor Array that is pre-biased and designed for surface mount applications. This NPN/PNP prebias SOT363 transistor offers a unique combination of technical specifications and performance benefits that make it ideal for various applications.

SMUN5312DW1T1G Features

  • Technical Specifications:

    • Current - Collector (Ic) (Max): 100mA
    • Resistor - Base (R1): 22kOhms
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • Power - Max: 187mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
    • Current - Collector Cutoff (Max): 500nA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Efficient Power Handling: With a maximum power rating of 187mW, the SMUN5312DW1T1G can handle high power applications effectively.
    • Low Saturation Voltage: The low Vce saturation voltage of 250mV ensures efficient operation and reduced power loss.
    • High Current Gain: The minimum hFE of 60 at 5mA and 10V provides excellent current amplification capabilities.
  • Unique Features and Advantages:

    • Pre-Biased Design: The pre-bias feature simplifies the design process and reduces the need for external biasing components.
    • Surface Mount Technology: The surface mount design allows for compact and efficient integration into various electronic devices.
    • Compliance with Regulations: The SMUN5312DW1T1G is compliant with RoHS3 and REACH regulations, ensuring environmental and safety standards are met.

SMUN5312DW1T1G Applications

The SMUN5312DW1T1G is ideal for various applications due to its unique features and performance benefits:

  • Audio Amplifiers: The low saturation voltage and high current gain make it suitable for audio amplifier applications where efficiency and performance are critical.
  • Power Management Circuits: The high power handling capability and low cutoff current make it ideal for power management circuits in electronic devices.
  • Automotive Electronics: The SMUN5312DW1T1G can be used in automotive electronics for various control and power management applications, thanks to its robustness and compliance with safety standards.

Conclusion of SMUN5312DW1T1G

The SMUN5312DW1T1G, with its pre-biased design, high current gain, and low saturation voltage, offers a reliable and efficient solution for various electronic applications. Its compliance with environmental and safety regulations, along with its surface mount technology, makes it an ideal choice for designers looking for a versatile and high-performance transistor array.

FAQ

Does SMUN5312DW1T1G have quantity-based pricing?
Yes. SMUN5312DW1T1G currently has 3 pricing tier(s), starting from 1 units.
What package or case is SMUN5312DW1T1G available in?
Are there related or alternative parts for SMUN5312DW1T1G?
What is SMUN5312DW1T1G?
What voltage specification is listed for SMUN5312DW1T1G?
Availability (In Stock : 17 )
Quantity Unit Price Ext. Price
1+ $0.64115 $0.64
10+ $0.52115 $5.21
30+ $0.46285 $13.89
ADD TO CART
QUICK ORDER
Unit Price $0.64115
Subtotal $0.64
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ