onsemi_SMUN5313DW1T3G
original

onsemi
SMUN5313DW1T3G

293-SMUN5313DW1T3G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL
12 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Collector Current
100mA
Max Power Dissipation
187mW
Packaging
Tape and Reel
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SMUN5313DW1T3G Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

FAQ

What voltage specification is listed for SMUN5313DW1T3G?
The listed voltage-related specification for SMUN5313DW1T3G is 50V.
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