onsemi_STD5407NT4G

onsemi
STD5407NT4G  
Single FETs, MOSFETs

onsemi
STD5407NT4G
278-STD5407NT4G
Ersa
onsemi-STD5407NT4G-datasheets-1417370.pdf
MOSFET N-CH 40V 7.6A/38A DPAK
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STD5407NT4G Description

STD5407NT4G Description

The STD5407NT4G is a high-performance MOSFET (Metal Oxide) device designed for applications requiring efficient power management and control. Manufactured by onsemi, this Single FET is designed to deliver superior performance in a variety of electronic systems. With its advanced technology and unique features, the STD5407NT4G stands out among similar models in the market.

STD5407NT4G Features

  • Technology: MOSFET (Metal Oxide) - This advanced technology offers improved performance, reliability, and efficiency compared to traditional bipolar junction transistors (BJTs).
  • Drain to Source Voltage (Vdss): 40 V - This high voltage rating allows the STD5407NT4G to handle demanding power applications.
  • Current - Continuous Drain (Id): 7.6A (Ta), 38A (Tc) - The device can handle a continuous drain current of up to 7.6A at ambient temperature and 38A at case temperature, making it suitable for high-current applications.
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V - The low on-resistance ensures minimal power loss and high efficiency in power management applications.
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V - The low gate charge contributes to faster switching speeds and reduced power consumption.
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 32 V - The low input capacitance enables faster response times and improved performance in high-frequency applications.
  • Vgs (Max): ±20V - The wide voltage range allows for greater flexibility in circuit design and compatibility with various power supplies.
  • Mounting Type: Surface Mount - This mounting type is ideal for space-constrained applications and allows for efficient heat dissipation.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - The STD5407NT4G is not sensitive to moisture, making it suitable for use in harsh environments.
  • REACH Status: REACH Unaffected - The device complies with the European Union's Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulations.

STD5407NT4G Applications

The STD5407NT4G is ideal for a variety of applications where high performance, efficiency, and reliability are critical. Some specific use cases include:

  1. Power Management: The device's high voltage and current ratings make it suitable for power management applications in consumer electronics, industrial equipment, and automotive systems.
  2. Motor Control: The low on-resistance and high current handling capabilities make the STD5407NT4G an excellent choice for motor control applications, such as electric vehicles, robotics, and industrial automation.
  3. Switching Regulators: The low gate charge and input capacitance enable fast switching speeds, making the STD5407NT4G ideal for switching regulator applications in power supplies and battery management systems.
  4. RF Power Amplifiers: The high voltage rating and low on-resistance make the STD5407NT4G suitable for use in RF power amplifiers for wireless communication systems.

Conclusion of STD5407NT4G

The STD5407NT4G is a high-performance MOSFET device that offers a unique combination of features and advantages over similar models. Its advanced technology, high voltage and current ratings, low on-resistance, and fast switching capabilities make it an ideal choice for a wide range of applications, including power management, motor control, switching regulators, and RF power amplifiers. Despite being classified as obsolete, the STD5407NT4G remains a reliable and efficient solution for demanding electronic systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Package Width
Typical Gate Charge @ Vgs (nC)

STD5407NT4G Documents

Download datasheets and manufacturer documentation for STD5407NT4G

Ersa Multi Devices 06/Jun/2017      
Ersa NTD5407N, STD5407N      
Ersa Mult Dev EOL 24/Jul/2019       Reactivation 29/Aug/2018       Mult Dev Eol 12/Jul/2018      
Ersa NTD5407N, STD5407N      
Ersa onsemi RoHS       onsemi REACH      

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