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SZMMSZ4690T1G

The SZMMSZ4690T1G is a high voltage, high power MOSFET manufactured by ON Semiconductor. This device is designed for use in a variety of applications that require high voltage and high power capabilities, including power supplies, motor control, and industrial control systems.

Description:

The SZMMSZ4690T1G is an N-channel MOSFET with a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of 4.7A at 25°C. It features a low on-state resistance (RDS(on)) of 4.2mΩ maximum, which helps to minimize power dissipation and improve efficiency in high current applications.

Features:

• N-channel MOSFET
• VDS of -100V
• ID of 4.7A at 25°C
• RDS(on) of 4.2mΩ maximum
• Suitable for use in high voltage and high power applications

Applications:

The SZMMSZ4690T1G is suitable for use in a variety of applications that require high voltage and high power capabilities. Some potential applications include:

1. Power supplies: The high voltage and low on-state resistance of the SZMMSZ4690T1G make it well-suited for use in power supply circuits, where it can help to improve efficiency and reduce power dissipation.
2. Motor control: The device's high current capabilities make it suitable for use in motor control applications, where it can be used to switch high current loads and control the speed and direction of motors.
3. Industrial control systems: The SZMMSZ4690T1G can be used in a variety of industrial control systems, where it can help to improve efficiency and reliability in high voltage and high power applications.

Overall, the SZMMSZ4690T1G is a versatile and powerful MOSFET that is well-suited for use in a variety of high voltage and high power applications. Its low on-state resistance and high current capabilities make it an excellent choice for power supply, motor control, and industrial control systems.